CT MICRO CTH281GB T1 Optocoupler with Gallium Arsenide Infrared Diode and 3750 VRMS Isolation Voltage
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Product Description
Product Overview
The CTH281GB series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this series offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is designed for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The optocoupler is compliant with RoHS, REACH, and Halogen regulations and is pending approval for UL, VDE, CQC, and IEC regulatory standards.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Package Type: Half Pitch Mini-Flat
- Certifications (Pending Approval): UL, VDE, CQC, IEC
- Compliance: RoHS, REACH, Halogen
- Isolation Voltage: 3750 VRMS
- Operating Temperature Range: -55 C to 125 C
Technical Specifications
| Model | Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|---|
| CTH281GB | Isolation Voltage (VISO) | 3750 | VRMS | ||||
| Total Power Dissipation (PTOT) | 200 | mW | |||||
| Operating Temperature (TOPR) | -55 | 125 | C | ||||
| Storage Temperature (TSTG) | -55 | 150 | C | ||||
| Soldering Temperature (TSOL) | 260 | C | |||||
| Forward Current (IF) | 60 | mA | |||||
| Peak Transient Current (IF(TRANS)) | 1s P.W, 300pps | 1000 | mA | ||||
| Reverse Voltage (VR) | 6 | V | |||||
| Emitter Power Dissipation (PD) | 70 | mW | |||||
| Detector Power Dissipation (PC) | 150 | mW | |||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |||||
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |||||
| Collector Current (IC) | 50 | mA | |||||
| Emitter Characteristics | Forward Voltage (VF) | IF=10mA | 1.25 | 1.4 | V | ||
| Reverse Current (IR) | VR = 6V | 5 | A | ||||
| Input Capacitance (CIN) | f= 1MHz | 10 | 30 | pF | |||
| Detector Characteristics | Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 7 | V | ||||
| Collector-Emitter Dark Current (ICEO) | VCE= 48V, IF=0mA | 100 | nA | ||||
| Collector-Emitter Dark Current (ICEO) | VCE = 48V, Ta = 85C | 50 | A | ||||
| Transfer Characteristics | Current Transfer Ratio (CTR) | IF=5mA, VCE=5V | 100 | 600 | % | ||
| Current Transfer Ratio (CTR) | IF=1mA, VCE= 0.4V | 30 | % | ||||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IF=1mA, IC= 0.2mA | 0.4 | V | ||||
| Isolation Resistance (RIO) | VIO= 500VDC | 5x1010 | |||||
| Isolation Capacitance (CIO) | f= 1MHz | 0.25 | 1 | pF | |||
| Switching Characteristics | Rise Time (tr) | IC= 2mA, VCE= 2V, RL= 100 | 5 | 16 | s | ||
| Fall Time (tf) | 6 | 16 | s | ||||
| Turn-on time (ton) | 8 | 20 | s | ||||
| Turn-off time (toff) | 7 | 20 | s |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina