Industrial Grade 4 Pin Phototransistor Optocoupler CT MICRO CT817D H HZD for High Isolation Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor, available in a 4-lead DIP package with various lead forming options. With a high isolation voltage of 5000 VRMS and an operating temperature range of -55 C to 110 C, this series is suitable for demanding environments. Key applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Series: CT817 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Package Type: 4-lead DIP
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Model/Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | ||||||
| Isolation Voltage (AC, 1 minute) | 5000 | VRMS | ||||
| Total Power Dissipation | 200 | mW | ||||
| Operating Temperature | -55 | 110 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Emitter Characteristics | ||||||
| Forward Current | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Voltage | 6 | V | ||||
| Emitter Power Dissipation | 100 | mW | ||||
| Detector Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | IC= 100A | 35 | V | |||
| Emitter-Collector Breakdown Voltage | IE= 100A | 6 | V | |||
| Collector Current | 50 | mA | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage | IF=10mA | - | 1.24 | 1.4 | V | |
| Reverse Current | VR = 6V | - | - | 5 | A | |
| Input Capacitance | f=1MHz | - | 10 | 30 | pF | |
| Collector-Emitter Breakdown Voltage | IC= 100A | 35 | - | - | V | |
| Emitter-Collector Breakdown Voltage | IE= 100A | 6 | - | - | V | |
| Collector-Emitter Dark Current | VCE= 20V, IF=0mA | - | - | 100 | nA | |
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | CT817, IF= 5mA, VCE= 5V | 50 | - | 600 | % | |
| Current Transfer Ratio (CTR) | CT817A, IF= 5mA, VCE= 5V | 80 | - | 160 | % | |
| Current Transfer Ratio (CTR) | CT817B, IF= 5mA, VCE= 5V | 130 | - | 260 | % | |
| Current Transfer Ratio (CTR) | CT817C, IF= 5mA, VCE= 5V | 200 | - | 400 | % | |
| Current Transfer Ratio (CTR) | CT817D, IF= 5mA, VCE= 5V | 300 | - | 600 | % | |
| Collector-Emitter Saturation Voltage | IF= 20mA, IC= 1mA | - | 0.1 | 0.2 | V | |
| Isolation Resistance | VIO= 500VDC | 5x1010 | - | - | ||
| Isolation Capacitance | f=1MHz | - | 0.25 | 1 | pF | |
| Switching Characteristics | ||||||
| Rise Time | IC= 2mA, VCE= 2V, RL= 100 | - | 6 | 18 | s | |
| Fall Time | - | 8 | 18 | s | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina