photodarlington optocoupler CT MICRO CT4N33 with 6 pin DIP package and 5000 VRMS isolation voltage
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Product Description
Product Overview
The CT Micro 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series are DC input 6-pin photodarlington optocouplers. These devices feature high isolation of 5000 VRMS and a wide operating temperature range of -55 C to 100 C. They are suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The optocouplers consist of a photodarlington transistor optically coupled to a gallium arsenide infrared-emitting diode, available in a 4-lead DIP package with various bending options.
Product Attributes
- Brand: CT Microelectronics
- Product Series: 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, TIL113
- Package Type: 6-Pin DIP
- Certifications: UL (UL1577), VDE (EN60747-5-5), CQC (GB4943.1, GB8898), IEC60065, IEC60950
- Material Option: Green (G) or Non-green
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (VISO) | 5000 | VRMS | ||||
| Operating Temperature (TOPR) | -55 | 100 | C | |||
| Storage Temperature (TSTG) | -55 | 150 | C | |||
| Soldering Temperature (TSOL) | 260 | C | ||||
| Forward Current (Emitter, IF) | 60 | mA | ||||
| Peak Transient Current (Emitter, IF(TRANS)) | 1s P.W, 300pps | 1 | A | |||
| Reverse Voltage (Emitter, VR) | 6 | V | ||||
| Power Dissipation (Emitter, PD) | 120 | mW | ||||
| Power Dissipation (Detector, PD) | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 55 | V | ||||
| Collector-Base Breakdown Voltage (BVCBO) | 55 | V | ||||
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | ||||
| Emitter-Base Breakdown Voltage (BVEBO) | 7 | V | ||||
| Electrical Characteristics (TA = 25C) | ||||||
| Forward Voltage (VF) | IF=10mA | 1.24 | 1.4 | V | ||
| Forward Voltage (VF) | H11B3, IF=50mA | 1.45 | 1.5 | V | ||
| Reverse Current (IR) | VR = 6V | - | 5 | A | ||
| Input Capacitance (CIN) | f= 1MHz | 45 | - | pF | ||
| Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 55 | - | - | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 7 | - | - | V | |
| Collector-Base Breakdown Voltage (BVCBO) | IC= 100A | 55 | - | - | V | |
| Collector-Emitter Dark Current (ICEO) | VCE= 10V, IF=0mA | - | 100 | nA | ||
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | 4N29, 4N30, IF= 10mA, VCE= 10V | 100 | - | - | % | |
| Current Transfer Ratio (CTR) | 4N31, IF= 10mA, VCE= 10V | 50 | - | - | % | |
| Current Transfer Ratio (CTR) | 4N32, 4N33, IF= 10mA, VCE= 10V | 500 | - | - | % | |
| Current Transfer Ratio (CTR) | H11B1, IF= 1mA, VCE= 10V | 500 | - | - | % | |
| Current Transfer Ratio (CTR) | H11B2, IF= 1mA, VCE= 10V | 200 | - | - | % | |
| Current Transfer Ratio (CTR) | H11B3, IF= 1mA, VCE= 10V | 100 | - | - | % | |
| Current Transfer Ratio (CTR) | H11B255, IF= 10mA, VCE= 5V | 100 | - | - | % | |
| Current Transfer Ratio (CTR) | TIL113, IF= 10mA, VCE= 1V | 300 | - | - | % | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 4N29, 4N30, 4N32, 4N33, IF= 8mA, IC= 2mA | - | - | 1.0 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 4N31, TIL113, IF= 8mA, IC= 2mA | - | - | 1.2 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | H11B1, H11B2, H11B3, IF= 1mA, IC= 1mA | - | - | 1.0 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | H11B255, IF=50mA, IC= 50mA | - | - | 1.0 | V | |
| Isolation Resistance (RIO) | VIO= 500VDC | 1x1011 | - | - | ||
| Isolation Capacitance (CIO) | f= 1Mhz | - | 0.25 | - | pF | |
| Switching Characteristics | ||||||
| Turn On Time (TON) | 4N29-4N33, TIL113, IF= 200mA, Ic= 50mA, RL= 100 | - | - | 4.7 | s | |
| Turn On Time (TON) | H11B1-H11B3, H11B255, IF= 10mA, VCC= 10V, RL= 100 | - | 24 | - | s | |
| Turn Off Time (TOFF) | 4N29, 4N30, 4N31, IF= 200mA, Ic= 50mA, RL= 100 | - | - | 30 | s | |
| Turn Off Time (TOFF) | 4N32, 4N33, TIL113, IF= 200mA, Ic= 50mA, RL= 100 | - | - | 90 | s | |
| Turn Off Time (TOFF) | H11B1, H11B2, H11B3, H11B255, IF= 10mA, VCC= 10V, RL= 100 | - | 17 | - | s | |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina