Compact 4 Pin Mini Flat Package AC Input Optocoupler CT MICRO CT354A V T1 with High Temperature Range

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Product Description

CT354 AC Input 4-Pin Mini-Flat Phototransistor Optocoupler

Product Overview

The CT354 series is an AC input optocoupler featuring a phototransistor optically coupled to two gallium arsenide infrared-emitting diodes, housed in a 4-lead Mini-Flat package. It offers high isolation of 3750 VRMS and operates within a temperature range of -55 C to 110 C. This optocoupler is suitable for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. CTR flexibility is available as per order information.

Product Attributes

Brand: CT Micro
Package Type: 4-Pin Mini-Flat
Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Input Type: AC Input
Output Type: Transistor Output

Technical Specifications

Symbol	Parameters	Test Conditions	Min	Typ	Max	Units
Absolute Maximum Rating
VISO	Isolation voltage				3750	VRMS
TOPR	Operating temperature		-55		+110	C
TSTG	Storage temperature		-55		+150	C
TSOL	Soldering temperature				260	C
PTOT	Total power dissipation				200	mW
IF	Forward current (Emitter)				50	mA
IF(TRANS)	Peak transient current (Emitter)	(1s P.W,300pps)			1	A
PD	Power dissipation (Emitter)				70	mW
PC	Power dissipation (Detector)				150	mW
BVCEO	Collector-Emitter Breakdown Voltage		80			V
BVECO	Emitter-Collector Breakdown Voltage		7			V
IC	Collector Current				50	mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Emitter Characteristics
VF	Forward voltage	IF=10mA	1.24	1.4		V
CIN	Input Capacitance	f= 1kHz		45		pF
Detector Characteristics
BVCEO	Collector-Emitter Breakdown Voltage	IC= 100A	80			V
BVECO	Emitter-Collector Breakdown Voltage	IE= 100A	7			V
ICEO	Collector-Emitter Dark Current	VCE= 20V, IF=0mA			100	nA
Transfer Characteristics
CTR	Current Transfer Ratio (CT354)	IF= 1mA, VCE= 5V	20		300	%
CTR	Current Transfer Ratio (CT354A)		50		150	%
VCE(SAT)	Collector-Emitter Saturation Voltage	IF= 20mA, IC= 1mA		0.1	0.2	V
RIO	Isolation Resistance	VIO= 500VDC	5x10¹⁰
CIO	Isolation Capacitance	f= 1MHz		0.6	1.0	pF
Switching Characteristics
tr	Rise Time	IC= 2mA, VCE= 2V, RL= 100		6	18	s
tf	Fall Time			8	18	s