optocoupler CT MICRO CT121GB T1 featuring phototransistor output and gallium arsenide infrared LED
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Product Description
Product Overview
The CT121GB Series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead Mini-Flat package. Designed for high isolation (3750 VRMS), it offers DC/AC input with a transistor output and operates across a wide temperature range of -55 C to 125 C. This series utilizes the DMC structure and is compliant with RoHS, REACH, and Halogen-free standards. It is suitable for applications in switch-mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Series: CT121GB
- Package Type: 4-Pin Mini-Flat
- Compliance: RoHS, REACH, Halogen Free
- Certifications (Pending Approval): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
- Structure: DMC
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (VISO) | 3750 | VRMS | ||||
| Total Power Dissipation (PTOT) | 200 | mW | ||||
| Operating Temperature (TOPR) | -55 | 125 | C | |||
| Storage Temperature (TSTG) | -55 | 150 | C | |||
| Soldering Temperature (TSOL) | 260 | C | ||||
| Emitter Forward Current (IF) | 60 | mA | ||||
| Emitter Peak Transient Current (IF(TRANS)) | 1s P.W, 300pps | 1000 | mA | |||
| Emitter Reverse Voltage (VR) | 6 | V | ||||
| Emitter Power Dissipation (PD) | 100 | mW | ||||
| Detector Power Dissipation (PC) | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | ||||
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | ||||
| Collector Current (IC) | 50 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Emitter Characteristics | ||||||
| Forward Voltage (VF) | IF=10mA | 1.2 | 1.3 | V | ||
| Reverse Current (IR) | VR = 6V | 5 | A | |||
| Input Capacitance (CIN) | f= 1MHz | 10 | 30 | pF | ||
| Detector Characteristics | ||||||
| Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IEC= 100A | 7 | V | |||
| Collector-Emitter Dark Current (ICEO) | VCE= 48V, IF=0mA | 100 | nA | |||
| Collector-Emitter Dark Current (ICEO) | VCE= 48V, IF=0mA , Ta=85C | 50 | uA | |||
| Transfer Characteristics | ||||||
| Current Transfer Ratio (CTR) | IF= 5mA, VCE= 5V | 100 | 600 | % | ||
| Current Transfer Ratio (CTR) | IF= 1mA, VCE= 0.4V | 30 | % | |||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IF= 8mA, IC= 2.4mA | 0.2 | 0.4 | V | ||
| Isolation Resistance (RIO) | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance (CIO) | f= 1MHz | 0.25 | 1 | pF | ||
| Switching Characteristics | ||||||
| Rise Time (tr) | IC= 2mA, VCE= 2V RL= 100 | 5 | 16 | s | ||
| Fall Time (tf) | 6 | 16 | s | |||
| Turn-on time (ton) | 8 | 20 | s | |||
| Turn-off time (toff) | 7 | 20 | s | |||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina