Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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phototransistor optocoupler CT MICRO CT817C-H with 4 pin DIP package and 5000 VRMS isolation voltage

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Product Description

CT817 Series DC Input 4-Pin Phototransistor Optocoupler

Product Overview

The CT817 series is a high-isolation phototransistor optocoupler featuring a gallium arsenide infrared-emitting diode in a 4-lead DIP package. Designed for robust performance, it offers high isolation voltage (5000 VRMS) and a wide operating temperature range of -55 C to 110 C. This series is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces, providing reliable signal isolation.

Product Attributes

  • Brand: CT Micro
  • Type: Phototransistor Optocoupler
  • Package: 4-Pin DIP
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Material Option: Green (G) or Non-green

Technical Specifications

Parameter Model Min Typ Max Units Notes
Absolute Maximum Ratings
Isolation Voltage 5000 VRMS
Total Power Dissipation 200 mW
Operating Temperature -55 110 C
Storage Temperature -55 150 C
Soldering Temperature 260 C
Emitter Forward Current 60 mA
Emitter Peak Transient Current 1 A (1s P.W,300pps)
Emitter Reverse Voltage 6 V
Emitter Power Dissipation 100 mW
Detector Power Dissipation 150 mW
Collector-Emitter Breakdown Voltage 35 V
Emitter-Collector Breakdown Voltage 6 V
Collector Current 50 mA
Electrical Characteristics
Forward Voltage 1.24 1.4 V IF=10mA
Reverse Current 5 A VR = 6V
Input Capacitance 10 30 pF f=1MHz
Collector-Emitter Breakdown Voltage 35 V IC= 100A
Emitter-Collector Breakdown Voltage 6 V IE= 100A
Collector-Emitter Dark Current 100 nA VCE= 20V, IF=0mA
Current Transfer Ratio (CTR) CT817 50 600 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT817A 80 160 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT817B 130 260 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT817C 200 400 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT817D 300 600 % IF= 5mA, VCE= 5V
Collector-Emitter Saturation Voltage 0.1 0.2 V IF= 20mA, IC= 1mA
Isolation Resistance 5x1010 VIO= 500VDC
Isolation Capacitance 0.25 1 pF f=1MHz
Switching Characteristics
Rise Time 6 18 s IC= 2mA, VCE= 2V RL= 100
Fall Time 8 18 s

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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