phototransistor optocoupler CT MICRO CT817C-H with 4 pin DIP package and 5000 VRMS isolation voltage
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Product Description
CT817 Series DC Input 4-Pin Phototransistor Optocoupler
Product Overview
The CT817 series is a high-isolation phototransistor optocoupler featuring a gallium arsenide infrared-emitting diode in a 4-lead DIP package. Designed for robust performance, it offers high isolation voltage (5000 VRMS) and a wide operating temperature range of -55 C to 110 C. This series is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces, providing reliable signal isolation.
Product Attributes
- Brand: CT Micro
- Type: Phototransistor Optocoupler
- Package: 4-Pin DIP
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
Technical Specifications
| Parameter | Model | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage | 5000 | VRMS | ||||
| Total Power Dissipation | 200 | mW | ||||
| Operating Temperature | -55 | 110 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Soldering Temperature | 260 | C | ||||
| Emitter Forward Current | 60 | mA | ||||
| Emitter Peak Transient Current | 1 | A | (1s P.W,300pps) | |||
| Emitter Reverse Voltage | 6 | V | ||||
| Emitter Power Dissipation | 100 | mW | ||||
| Detector Power Dissipation | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage | 35 | V | ||||
| Emitter-Collector Breakdown Voltage | 6 | V | ||||
| Collector Current | 50 | mA | ||||
| Electrical Characteristics | ||||||
| Forward Voltage | 1.24 | 1.4 | V | IF=10mA | ||
| Reverse Current | 5 | A | VR = 6V | |||
| Input Capacitance | 10 | 30 | pF | f=1MHz | ||
| Collector-Emitter Breakdown Voltage | 35 | V | IC= 100A | |||
| Emitter-Collector Breakdown Voltage | 6 | V | IE= 100A | |||
| Collector-Emitter Dark Current | 100 | nA | VCE= 20V, IF=0mA | |||
| Current Transfer Ratio (CTR) | CT817 | 50 | 600 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817A | 80 | 160 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817B | 130 | 260 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817C | 200 | 400 | % | IF= 5mA, VCE= 5V | |
| Current Transfer Ratio (CTR) | CT817D | 300 | 600 | % | IF= 5mA, VCE= 5V | |
| Collector-Emitter Saturation Voltage | 0.1 | 0.2 | V | IF= 20mA, IC= 1mA | ||
| Isolation Resistance | 5x1010 | VIO= 500VDC | ||||
| Isolation Capacitance | 0.25 | 1 | pF | f=1MHz | ||
| Switching Characteristics | ||||||
| Rise Time | 6 | 18 | s | IC= 2mA, VCE= 2V RL= 100 | ||
| Fall Time | 8 | 18 | s | |||
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina