Six channel digital isolator HopeRF Micro-electronics CMT8263N1 offering 5.7kVrms isolation voltage and enhanced EMC immunity
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Delivery Time:
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Product Description
Product Overview
The CMT826X series are high-performance, six-channel digital isolators utilizing SiO2 isolation technology, supporting up to 5.7kVrms isolation voltage. These isolators facilitate communication between different power domains, preventing noise currents from affecting sensitive circuits. They offer enhanced electromagnetic compatibility (EMC) with system-level ESD, EFT, and surge immunity, along with low radiation. Available in SOIC-16 wide and narrow body packages, the CMT826X series provides robust and reliable isolation for demanding applications.
Product Attributes
- Brand: HoPeRF (implied from www.hoperf.cn)
- Certifications: DIN VDE V 0884-11: 2017-01, UL 1577 Component Certification, CSA Certification (IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1), CQC Certification (GB4943.1-2022), TUV Certification (EN 60950-1, EN 62368-1, EN 61010-1)
- Material: SiO2 (Silicon Dioxide) isolation gate
- Application Scenarios: Industrial Automation, New Energy Vehicles, Photovoltaic Inverters, Motor Control, Isolated SPI, General-purpose multi-channel isolation
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
| Data Rate | 150 | Mbps | ||||
| Supply Voltage Range | VDD1, VDD2 | 2.5 | 5.5 | V | ||
| Operating Temperature Range | TA | -40 | 125 | C | ||
| Isolation Rating | 5 | kVRMS | ||||
| Surge Capability | 8 | kV | ||||
| Common-Mode Transient Immunity (CMTI) | 250 | kV/s | ||||
| Power Consumption (per channel @ 1 Mbps) | 1.5 | mA | Low power | |||
| Propagation Delay (at 5V supply) | 9 | ns | Low propagation delay | |||
| Expected Lifespan | 40+ | Years | Robust and reliable isolation barrier | |||
| ESD Contact Discharge Protection (across isolation barrier) | 8 | kV IEC 61000-4-2 | Enhanced EMC | |||
| Absolute Maximum Supply Voltage | VDD1, VDD2 | -0.5 | 6 | V | [2] | |
| Absolute Maximum Input Voltage | INx | -0.4 | VDD+0.4 | V | ||
| Absolute Maximum Output Voltage | OUTx | -0.4 | VDD+0.4 | V | ||
| Absolute Maximum Input/Output Pulse Voltage | -0.8 | VDD+0.8 | V | Pulse width | ||
| Absolute Maximum Storage Temperature | TSTG | -40 | 150 | C | ||
| Recommended High-Level Input Voltage | VIH | 2 | VDDI | V | VDDI: Input side VDD | |
| Recommended Low-Level Input Voltage | VIL | 0 | 0.8 | V | VDDI: Input side VDD | |
| ESD Rating (HBM) | VESD | 8000 | V | Human Body Model | ||
| ESD Rating (CDM) | VESD | 2000 | V | Component Charge Model |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina