Photocoupler device ISOCOM IS314W for driving power IGBTs and MOSFETs in motor control applications
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Product Description
Product Overview
The IS314W Photocoupler from ISOCOM COMPONENTS is engineered for driving power IGBTs and MOSFETs in inverters for motor control and power supply systems. It features an AlGaAs LED optically coupled to an integrated circuit with a power output stage, housed in a Stretched SO6 package. This device offers a maximum peak output current of 1.0A, rail-to-rail output voltage, and robust common mode rejection. With a wide operating voltage range and under-voltage lock-out protection, the IS314W ensures reliable performance across a broad temperature range, making it suitable for applications like UPS, switching power supplies, and AC/DC motor drives.
Product Attributes
- Brand: ISOCOM COMPONENTS
- Model: IS314W
- Package: Stretched SO6
- Compliance: Lead Free and RoHS Compliant
- Safety Approvals: Pending
- MSL Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Forward Current | 25 | mA | ||||
| Forward Peak Current | Pulse Width 1s, 300pps | 1.0 | A | |||
| Reverse Voltage | 5 | V | ||||
| Power dissipation | 45 | mW | ||||
| Input High Level Peak Output Current | Exponential waveform. Pulse width 0.3 s, f 15 kHz | 1.0 | A | |||
| Low Level Peak Output Current | Exponential waveform. Pulse width 0.3 s, f 15 kHz | 1.0 | A | |||
| Supply Voltage (VCC VEE) | 35 | V | ||||
| Power Dissipation | 250 | mW | ||||
| Output Isolation Voltage | 5000 | VRMS | ||||
| Total Power Dissipation | 295 | mW | ||||
| Operating Temperature | TA | -40 | 105 | C | ||
| Storage Temperature | -55 | 125 | C | |||
| Lead Soldering Temperature | (10s) | 260 | C | |||
| Recommended Operating Conditions | ||||||
| Operating Temperature | TA | -40 | 105 | C | ||
| Supply Voltage | VCC VEE | 10 | 30 | V | ||
| Input Current (ON) | IF(ON) | 7 | 16 | mA | ||
| Input Voltage (OFF) | VF(OFF) | -3.0 | 0.8 | V | ||
| Electrical Characteristics | ||||||
| Forward Voltage | VF | IF = 10mA | 1.37 | 1.8 | V | |
| Reverse Voltage | VR | IR = 10A | 5 | V | ||
| Input Threshold Current (Low to High) | IFLH | 1.9 | 5 | mA | ||
| Input Threshold Voltage (High to Low) | VFHL | 0.8 | V | |||
| Input Capacitance | CIN | VF = 0V, f = 1MHz | 33 | pF | ||
| High Level Supply Current | ICCH | IF = 7 to 16mA, VO = Open | 1.9 | 3.0 | mA | |
| Low Level Supply Current | ICCL | VF = 3 to 0.8V, VO = Open | 2.1 | 3.0 | mA | |
| High Level Output Current | IOH | VO = VCC 1.5V, Pulse Width = 50s | -0.3 | A | ||
| High Level Output Current | IOH | VO = VCC 3V, Pulse Width = 10s | -0.8 | A | ||
| Low Level Output Current | IOL | VO = VEE + 1.5V, Pulse Width = 50s | 0.3 | A | ||
| Low Level Output Current | IOL | VO = VEE + 3V, Pulse Width = 10s | 0.8 | A | ||
| High Level Output Voltage | VOH | IF = 10mA, IO = -100mA | VCC 0.6 | VCC 0.35 | V | |
| Low Level Output Voltage | VOL | IF = 0mA, IO = 100mA | VEE +0.25 | VEE +0.4 | V | |
| UVLO Threshold | VUVLO+ | VO > 5V, IF = 10mA | 7.8 | V | ||
| UVLO Threshold | VUVLO- | VO | 6.7 | V | ||
| UVLO Hysteresis | UVLOHYS | 1.1 | V | |||
| Switching Characteristics | ||||||
| Propagation Delay Time to High Output Level | tPLH | IF = 7 to 16mA, VCC = 15 to 30V, VEE = 0V, Rg = 47, Cg = 3nF, f = 10kHz, Duty Cycle = 50% | 50 | 120 | 200 | ns |
| Propagation Delay Time to Low Output Level | tPHL | IF = 7 to 16mA, VCC = 15 to 30V, VEE = 0V, Rg = 47, Cg = 3nF, f = 10kHz, Duty Cycle = 50% | 50 | 110 | 200 | ns |
| Pulse Width Distortion | PWD | |tPHL - tPLH| for any given device | 20 | 70 | ns | |
| Propagation Delay Difference | PDD | (tPHL - tPLH) between any two Devices | -100 | 100 | ns | |
| Output Rise Time (10% to 90%) | tr | 35 | ns | |||
| Output Fall Time (90% to 10%) | tf | 35 | ns | |||
| Common Mode Transient Immunity at High Output Level | CMH | IF = 10 to 16mA, VCC = 30V, VCM = 1500V, TA = 25C | 20 | 25 | kV/s | |
| Common Mode Transient Immunity at Low Output Level | CML | VF = 0V, VCC = 30V, VCM = 1500V, TA = 25C | 20 | 25 | kV/s | |
| Isolation Characteristics | ||||||
| Insulation Voltage | VISO | RH 40% to 60%, t = 1 min, TA = 25C | 5000 | V | ||
| Input - Output Resistance | RI-O | VI-O = 500VDC | 1012 | |||
| Input - Output Capacitance | CI-O | f = 1MHz, TA = 25C | 0.92 | pF | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina