photo coupler ISOMICRON 6N135-000E-AXW high isolation device for signal separation and transmission
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 6N135/6N136 series are high isolation photo couplers designed for reliable signal transmission in demanding environments. Featuring an AlGaAs infrared emitting diode coupled to a high-speed silicon phototransistor, these devices offer superior speed and isolation capabilities compared to conventional optocouplers. They are ideal for applications requiring robust signal separation, such as line receivers, telecommunication equipment, and interface circuits.
Product Attributes
- Brand: ISOMICRON
- Product Line: 6N135/6N136 High Isolation Photo Coupler
- Certifications: UL - UL1577, VDE - EN60747-5-5(VDE0884-5), CQC - GB4943.1
- Compliance: RoHS & REACH Compliance, Halogen free (Optional)
- MSL Class: 1
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Forward Current | IF | 25 | mA | |
| Peak Forward Current | IFP | 50 | mA | 50% duty, 1ms P.W |
| Peak Transient Current | IF(trans) | 1 | A | ≤1µs P.W, 300pps |
| Reverse Voltage | VR | 5 | V | |
| Input Power Dissipation | PI | 100 | mW | |
| Supply Voltage | VCC | -0.5~30 | V | |
| Output Voltage | VO | -0.5~20 | V | |
| Output Current | IO | 50 | mA | |
| Emitter-Base Reverse Voltage | VEBR | 5 | V | |
| Base Current | IB | 5 | mA | |
| Output Power Dissipation | PO | 100 | mW | |
| Total Power Dissipation | Ptot | 200 | mW | |
| Isolation Voltage | Viso | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% |
| Operating Temperature | Topr | -40~100 | °C | |
| Storage Temperature | Tstg | -55~125 | °C | |
| Soldering Temperature | Tsol | 260 | °C | For 10 seconds |
| Electrical Optical Characteristics (Ta = 25°C) | ||||
| Forward Voltage | VF | - | 1.45~1.8 | V (IF=16mA) |
| Reverse Current | IR | - | 10 | µA (VR=5V) |
| Input Capacitance | Cin | - | 60 | pF (V=0, f=1MHz) |
| High Level Supply Current | ICCH | - | 0.01~1 | µA (IF=0mA, VO=Open, VCC=15V, Ta=25°C) |
| Low Level Supply Current | ICCL | - | 200 | µA (IF=16mA, VO=Open, VCC=15V) |
| Logic High Output Current | IOH | - | 0.001~0.5 | µA (IF=0mA, VO=VCC=5.5V, Ta=25°C) |
| Transfer Characteristics (Ta=25°C) | ||||
| Current Transfer Ratio (6N135) | CTR | 7 | 50 | % (IF = 16mA ,VO = 0.4V, VCC=4.5V, Ta=25°C) |
| Current Transfer Ratio (6N136) | CTR | 19 | 50 | % (IF = 16mA ,VO = 0.4V, VCC=4.5V, Ta=25°C) |
| Logic Low Output Voltage (6N135) | VOL | - | 0.18~0.4 | V (IF = 16mA ,IO = 1.1mA, VCC=4.5V, Ta=25°C) |
| Logic Low Output Voltage (6N136) | VOL | - | 0.25~0.4 | V (IF = 16mA ,IO = 3mA, VCC=4.5V, Ta=25°C) |
| Isolation Resistance | Riso | 10^12 | 10^14 | Ω (DC500V, 40 ~ 60% R.H.) |
| Floating Capacitance | CIO | - | 0.3 | pF (V=0, f=1MHz) |
| Switching Characteristics (Ta=25°C, IF=16mA ,VCC=5V) | ||||
| Propagation Delay Time to Logic Low (6N135) | tPHL | - | 0.35~1.5 | µs (RL=4.1kΩ,Ta=25°C) |
| Propagation Delay Time to Logic Low (6N136) | tPHL | - | 0.35~0.8 | µs (RL=1.9kΩ,Ta=25°C) |
| Propagation Delay Time to Logic High (6N135) | tPLH | - | 0.5~1.5 | µs (RL=4.1kΩ,Ta=25°C) |
| Propagation Delay Time to Logic High (6N136) | tPLH | - | 0.3~0.8 | µs (RL=1.9kΩ,Ta=25°C) |
| Common Mode Transient Immunity at Logic High (6N135) | CMH | 1000 | - | V/µs (IF = 0mA , VCM=10Vpp, RL=4.1kΩ, Ta =25°C) |
| Common Mode Transient Immunity at Logic High (6N136) | CMH | 1000 | - | V/µs (IF = 0mA , VCM=10Vpp, RL=1.9kΩ, Ta=25°C) |
| Common Mode Transient Immunity at Logic Low (6N135) | CML | 1000 | - | V/µs (IF = 16mA , VCM=10Vpp, RL=4.1kΩ, Ta=25°C) |
| Common Mode Transient Immunity at Logic Low (6N136) | CML | 1000 | - | V/µs (IF = 16mA , VCM=10Vpp, RL=1.9kΩ, Ta=25°C) |
| Ordering Information | ||||
| Part Number | Package | Marking | Packing | Quantity |
| 6N135-000E / 6N136-000E | DIP8 | 6N13X /YYWW | Tube | 45 |
| 6N135-100E / 6N136-100E | DIP8-M | 6N13X /YYWW | Tube | 45 |
| 6N135-500E / 6N136-500E | DIP8-SL | 6N13X /YYWW | Reel | 1000 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina