KTP TLP155 photocoupler featuring GaAlAs infrared LED and buffered push pull output for gate driving

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Product Description

Product Overview

The TLP155 is a gate driver photocoupler comprising a GaAlAs infrared LED and an integrated high-gain, high-speed photodetector. Packaged in SO6, it features an internal Faraday shield for 20kV/s common-mode transient immunity. This device is ideal for direct gate driving of IGBTs or power MOSFETs, offering buffered logic-type (push-pull) output with a peak output current of 0.6A.

Product Attributes

Brand: KTP Semiconductor
Package: SO6
Certifications: Not specified
Material: Not specified
Color: Not specified
Origin: Not specified

Technical Specifications

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Maximum Ratings
Input Forward Current	IF			20	mA
Peak Transient Input Forward Current	IFPT			1	A	Pulse width 1s, 300pps
Input Power Dissipation	PD			40	mW
Input Junction Temperature	Tj			125
Peak High-Level Output Current	IOPH			-0.6	A	TA=-40 to 100
Peak Low-Level Output Current	IOPL			0.6	A	TA=-40 to 100
Output Voltage	VO			35	V
Supply Voltage	VCC			35	V
Output Power Dissipation	PO			80	mW
Output Junction Temperature	Tj			125
Operating Temperature	Topr	-40		100
Storage Temperature	Tstg	-55		125
Lead Solder Temperature (10s)	Tsol			260
Isolation Voltage (AC, 60s)	BVS	3750			Vrms	R.H.60%
Recommended Operating Conditions
Input Threshold Current (L/H)	IFLH		10	15	mA
Input Threshold Voltage (H/L)	VFHL	0		0.8	V
Supply Voltage	VCC	10		30	V
Peak High-Level Output Current	IOPH			-0.2	A
Peak Low-Level Output Current	IOPL			0.2	A
Operating Temperature	Topr	-40		100
Operating Frequency	f			250	kHz
Electrical Characteristics
Input Forward Voltage	VF	1.40	1.57	1.80	V	IF=10mA, TA=25
Forward Voltage Temperature Coefficient	VF/TA		-1.8		mV/	IF=10mA
Input Reverse Current	IR			10	uA	VR=5V, TA=25
Input Capacitance	Ct		60		pF	V=0V, f=1MHz, TA=25
High-Level Output Voltage	VOH	9.8	9.9		V	IF=10mA, VCC=10V, IO=-100mA
Low-Level Output Voltage	VOL		0.06	0.2	V	VF=0.8V, VCC=10V, IO=100mA
High-Level Supply Current	ICCH		1.7	3.0	mA	IF=10mA, VCC=10 to 30V, VO=Open
Low-Level Supply Current	ICCL		2.1	3.0	mA	IF=0mA, VCC=10 to 30V, VO=Open
Input Threshold Current (L/H)	IFLH		1.0	7.5	mA	VCC=15V, VO>1V
Input Threshold Voltage (H/L)	VFHL	0.8			V	VCC=15V, VO1V
Supply Voltage	VCC		10	30	V
Under Voltage Lockout Threshold+	VUVLO+		7.9		V	IF=10mA, VO>5V
Under Voltage Lockout Threshold-	VUVLO		7		V	IF=10mA, VO
Under Voltage Lockout Hysteresis	UVLOHYS		0.9		V
Switching Characteristics
High-Level Propagation Delay	tPLH	50	120	200	ns	IF=010mA, VCC=20V, Rg=30, Cg=1nF
Low-Level Propagation Delay	tPHL	50	120	200	ns	IF=100mA, VCC=20V, Rg=30, Cg=1nF
Propagation Delay Skew	tpsk	-85		85	ns	IF=010mA, VCC=20V, Rg=30, Cg=1nF
Pulse Width Distortion	\|tPHL-tPLH\|		5	50	ns	IF=010mA, VCC=20V, Rg=30, Cg=1nF
Output Rise Time	tR		35		ns	IF=010mA, VCC=20V, Rg=30, Cg=1nF
Output Fall Time	tF		15		ns	IF=100mA, VCC=20V, Rg=30, Cg=1nF
Common Mode Rejection High-Level	CMH	20			kV/s	VCM=1000VP-P, IF=10mA, VCC=20V, TA=25, VO(MIN)=16V
Common Mode Rejection Low-Level	CML	20			kV/s	VCM=1000VP-P, IF=0mA, VCC=20V, TA=25, VO(MAX)=1V

Applications

Plasma Display Panels (PDPs)
Transistor Inverters
MOSFET Gate Drivers
IGBT Gate Drivers

Notes

A 0.1F bypass capacitor must be connected between pins 4 and 6.
When handling and assembling this device, take standard electrostatic discharge (ESD) precautions to prevent damage or degradation to the device.