1 Amp Output Current Gate Drive Optocoupler KTP HCPL-3150-C1H0 Suitable for IGBT and MOSFET Drivers
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Product Description
HCPL-3150 High CMR, 1.0A Output Current, Gate Drive Optocoupler
The HCPL-3150 is a 1.0A output current gate drive optocoupler that drives most 800V/20A IGBT/MOSFETs. It is ideal for fast switching applications in motor control inverters and high-performance power systems. It consists of an aluminum gallium arsenide (AlGaAs) LED optically coupled to an integrated circuit with a high-speed driver to deliver a push-pull MOSFET output stage.
Product Attributes
- Brand: KTP Semiconductor
- Origin: China (implied by Chinese manual)
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
| General Characteristics | ||||||
| Common Mode Rejection | CMR | 20 | 50 | kV/s | At 20kV/s (Min) | |
| Output Voltage Swing | - | Near Supply Rail | - | - | - | Using P-channel MOSFET output stage |
| Power Supply Voltage Range | VDD-VSS | 15 | - | 30 | V | - |
| Switching Speed (Propagation Delay) | - | - | - | 500 | ns | Max |
| Pulse Width Distortion | - | - | - | 300 | ns | Max |
| Undervoltage Lockout (UVLO) | - | - | - | - | - | With hysteresis |
| Operating Temperature Range | TOPR | -40 | - | 100 | C | - |
| Electrical Characteristics | ||||||
| Input Forward Voltage | VF | 1.2 | 1.5 | 1.8 | V | IF=10mA |
| Input Capacitance | CIN | - | 60 | - | pF | f=1MHz, VF=0V |
| High-Level Output Current | IOH | 0.2 | 1.0 | - | A | VO=VDD-4V |
| Low-Level Output Current | IOL | - | 1.0 | - | A | VO=VDD+4V |
| High-Level Output Voltage | VOH | VDD-0.75 | - | VDD-0.1 | V | IF=10mA, IO=-100mA |
| Low-Level Output Voltage | VOL | VSS+0.1 | - | VSS+0.5 | V | IF=0mA, IO=100mA |
| High-Level Supply Current | IDDH | - | 2.8 | 5 | mA | VO=Open, IF=7 to 16mA |
| Low-Level Supply Current | IDDL | - | 2.8 | 5 | mA | VO=Open, VF=0 to 0.8V |
| Undervoltage Lockout Threshold (Positive) | VUVLO+ | 11 | 12.7 | 14 | V | IF=10mA, VO>5V |
| Undervoltage Lockout Threshold (Negative) | VUVLO | 9.7 | 11.2 | 12.7 | V | IF=10mA, VO |
| Undervoltage Lockout Hysteresis | UVLOHYS | 1.5 | - | - | V | - |
| Switching Characteristics | ||||||
| Logic Low to High Propagation Delay | tPHL | 100 | 275 | 500 | ns | - |
| Logic High to Low Propagation Delay | tPLH | 100 | 255 | 500 | ns | - |
| Pulse Width Distortion | PWD | - | 20 | 300 | ns | |tPHL-tPLH| |
| Output Rise Time | tR | - | 60 | - | ns | 10%~90% |
| Output Fall Time | tF | - | 60 | - | ns | 90%~10% |
| Isolation Characteristics | ||||||
| Input-Output Isolation Voltage | VISO | 5000 | - | - | VRMS | TA=25, R.H. |
| Isolation Resistance | RISO | 1011 | - | - | VIO=500V | |
| Isolation Capacitance | CISO | - | 1 | - | pF | VIO=0V, frequency=1.0MHz |
Applications
- Industrial Inverters
- Uninterruptible Power Supplies (UPS)
- Induction Heating
- Isolated IGBT/Power MOSFET Gate Drivers
Notes
- A 0.1F bypass capacitor must be connected between pins 5 and 8.
- External circuitry needs to be connected to pins 6 and 7.
- ESD precautions are recommended during handling and assembly.
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina