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Intelligent power module interface optocoupler KTP HCPL-M456-C5H0 for inverter efficiency improvement

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Product Description

HCPL-M456 Intelligent Power Module Interface Optocoupler

The HCPL-M456 is an intelligent power module interface optocoupler that uses a GaAsP LED optically coupled to a high-gain photodetector. Its minimal propagation delay difference makes it ideal for improving inverter efficiency by reducing switching dead-time in general IPM applications. It operates within an industrial temperature range of -40C to 100C.

Product Attributes

  • Brand: KTP Semiconductor
  • Model: HCPL-M456
  • Origin: Derived from URL (ktp-semi.com)

Technical Specifications

Parameter Symbol Min Typical Max Unit Test Condition
Electrical Characteristics (Unless otherwise specified, TA=-40C to +100C, VCC=4.5V to 30V, IF(on)=10mA to 20mA, VF(off)=-5V to 0.8V. Typical values are measured at TA=25, VCC=15V.)
Current Transfer Ratio CTR 44 90 % IF=10mA, VO=0.6V
Low Level Output Current IOL 4.4 9.0 mA IF=10mA, VO=0.6V
Low Level Output Voltage VOL 0.3 0.6 V IO=2.4mA
Input Threshold Current ITH 1.5 5.0 mA VO=0.8V, IO=0.75mA
High Level Output Current IOH 5 50 uA VF=0.8V
High Level Supply Current ICCH 0.6 1.3 mA VF=0.8V, VO=Open
Low Level Supply Current ICCL 0.6 1.3 mA IF=10mA, VO=Open
Input Forward Voltage VF 1.5 1.8 V IF=10mA
Forward Voltage Temp. Coefficient VF/TA -1.6 mV/ IF=10mA
Input Breakdown Voltage BVR 5 V IR=10uA
Input Capacitance CIN 60 pF f=1MHz, VF=0V
Switching Characteristics (RL=20K, Unless otherwise specified, TA=-40C to +100C, VCC=4.5V to 30V, IF(on)=10mA to 20mA, VF(off)=-5V to 0.8V. Typical values are measured at TA=25, VCC=15V.)
Low Level Output Delay Time tPHL 30 200 400 ns CL=100pF
High Level Output Delay Time tPLH 130 270 550 ns CL=100pF
Pulse Width Distortion PWD 200 450 ns
Propagation Delay Difference (Any two paths) tPLH-tPHL -150 200 450 ns CL=100pF
High Level Output Common Mode Transient Rejection CMH 15 30 kV/us IF=0mA, VO3.0V
Low Level Output Common Mode Transient Rejection CML 15 30 kV/us IF=10mA, VO1.0V
Package Characteristics
Input-Output Isolation Breakdown Voltage VISO 3750 Vrms RH
Input-Output Resistance RI-O 1012 VI-O=500Vdc
Input-Output Capacitance CI-O 0.6 pF f=1MHz
Maximum Ratings
Storage Temperature TS -55 125
Operating Temperature TA -40 100
Average Input Current IF(AVG) 25 mA
Peak Input Current (50% duty cycle, 1us pulse width) IF(PEAK) 50 mA
Transient Input Current (Pulse width IF(TRAN) 1 A
Reverse Input Voltage (Pin 3-1) VR 5 V
Average Output Current (Pin 5) IO(AVG) 15 mA
Output Voltage (Pin 5-4) VO -0.5 30 V
Supply Voltage (Pin 6-4) VCC -0.5 30 V
Output Dissipation Power PO 100 mW
Total Dissipation Power PT 145 mW
Recommended Operating Conditions
Supply Voltage VCC 4.5 30 V
Output Voltage VO 0 30 V
Forward Input Current (ON) IF(ON) 10 20 mA
Forward Input Voltage (OFF) VF(OFF) -5 0.8 V
Operating Temperature TA -40 100

Applications

  • IPM Isolation
  • IGBT/MOSFET Gate Isolation Drive
  • AC and Brushless DC Motor Drives
  • Industrial Inverters

Notes

Conventional electrostatic discharge (ESD) precautions are recommended when handling and assembling this device to prevent damage or degradation due to ESD.


Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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