High isolation phototransistor optocoupler KTP KTP357C TA AW with infrared emitting diode technology
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Product Description
Product Overview
The KTP357 series is a phototransistor optocoupler featuring an infrared emitting diode optically coupled to a phototransistor detector. Encased in a compact 4-pin SOP package with a 2.0 mm profile, these devices offer high isolation voltage, halogen-free compliance, and adherence to EU REACH and RoHS standards. They are suitable for signal transmission between circuits of different potentials and impedances, making them ideal for DC converters, programmable controllers, and telecommunication equipment.
Product Attributes
- Brand: KTP Semiconductor
- Certifications: Halogen Free (Br <900 ppm, Cl <900 ppm, Br+Cl <1500 ppm), EU REACH, RoHS Compliant, Pb Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Absolute Maximum Ratings | ||||||
| Forward current | IF | 50 | mA | |||
| Peak forward current (1us pulse) | IFP | 1 | A | (1us pulse) | ||
| Reverse voltage | VR | 6 | V | |||
| Input Power dissipation | PD | 70 | mW | |||
| Collector current | IC | 50 | mA | |||
| Collector and emitter Voltage | VCEO | 80 | V | |||
| Emitter and Collector Voltage | VECO | 7 | V | |||
| Output Power dissipation | Pc | 150 | mW | |||
| Total Consume Power | PTOT | 200 | mW | |||
| Isolation Voltage | Viso | 3750 | Vrms | (AC for 1 minute, 40~60%RH) | ||
| Operating temperature | TOPR | -55 | +110 | |||
| Storage temperature | TSTG | -55 | +125 | |||
| Soldering temperature | TSOL | 260 | (Soldering time is 10 seconds) | |||
| Electrical Characteristics | ||||||
| Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | |
| Reverse current | IR | 10 | A | VR=4V | ||
| Input capacitance | Cin | 30 | 250 | pF | V=0, f=1kHz | |
| Collector-Emitter dark current | ICEO | 100 | nA | VCE=20V, IF =0mA | ||
| Collector-Emitter breakdown voltage | VCEO | 80 | V | IC=0.1mA, IF=0mA | ||
| Emitter-Collector breakdown voltage | VECO | 7 | V | IE=0.01mA, IF=0mA | ||
| Collector-Emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | |
| Current transfer ratio | CTR | 50 | 600 | IF=5mA, VCE=5V | ||
| Isolation resistance | RISO | 51010 | VIO=500Vdc, 40~60% R.H. | |||
| Floating capacitance | Cf | 0.6 | 1.0 | pF | VIO=0, f=1MHz | |
| Rise time | tr | 3 | 18 | s | VCE=2V, IC=2mA, RL=100 | |
| Fall time | tf | 4 | 18 | s | ||
| Transfer Characteristics level table | ||||||
| Current Transferratio (KTP357) | CTR | 50 | 600 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-A) | CTR | 80 | 160 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-B) | CTR | 130 | 260 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-C) | CTR | 200 | 400 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-D) | CTR | 300 | 600 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-E) | CTR | 100 | 200 | IF=5mA, VCE=5V | ||
| Current Transferratio (KTP357-F) | CTR | 150 | 300 | IF=5mA, VCE=5V | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina