Photocoupler LITEON LTV-3150-L IGBT Gate Drive Device with Rail to Rail Output Voltage and High CMR
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Product Description
LTV-3150-L Series Photocoupler
The LTV-3150-L series is an IGBT gate drive optocoupler designed for driving power IGBTs and MOSFETs in motor control inverter applications and power supply system inverters. It features a 1.0A peak output current capable of directly driving IGBTs up to 1200 V/50 A, and offers rail-to-rail output voltage and high Common Mode Rejection (CMR). The optocoupler's operational parameters are guaranteed over a wide temperature range of -40C to +105C.
Product Attributes
- Brand: LITE-ON Technology Corp.
- Origin: Taiwan, R.O.C.
- Certifications: UL/ cUL Recognized (5000 VRMS/1 min), IEC/EN/DIN EN 60747-5-5 (VIORM = 630 Vpeak)
- MSL Level: 1
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition | Note |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Storage Temperature | Tstg | -55 | +125 | C | |||
| Operating Temperature | Topr | -40 | +105 | C | |||
| Output IC Junction Temperature | TJ | 125 | C | ||||
| Total Output Supply Voltage | (VCC VEE) | 0 | 35 | V | |||
| Average Forward Input Current | IF | 25 | mA | ||||
| Reverse Input Voltage | VR | 5 | V | ||||
| Peak Transient Input Current | IF(TRAN) | 1.0 | A | 1 | |||
| "High" Peak Output Current | IOH(PEAK) | 1.0 | A | 2 | |||
| "Low" Peak Output Current | IOL(PEAK) | 1.0 | A | 2 | |||
| Input Current (Rise/Fall Time) | tr(IN) /tf(IN) | 500 | ns | 3 | |||
| Output Voltage | VO(PEAK) | -0.5 | VCC | V | |||
| Power Dissipation | PI | 45 | mW | ||||
| Output Power Dissipation | PO | 250 | mW | ||||
| Total Power Dissipation | PT | 295 | mW | ||||
| Lead Solder Temperature | Tsol | 260 | C | ||||
| Recommended Operating Conditions | |||||||
| Operating Temperature | TA | -40 | 105 | C | |||
| Supply Voltage | VCC | 10 | 30 | V | |||
| Input Current (ON) | IFL(ON) | 7 | 16 | mA | |||
| Input Voltage (OFF) | VF(OFF) | -3.0 | 0.8 | V | |||
| Electrical Optical Characteristics | |||||||
| Input Forward Voltage | VF | 1.2 | 1.37 | 1.8 | V | IF = 10mA | 13 |
| Input Forward Voltage Temp. Coeff. | VF/ T | -1.237 | mV/C | IF = 10mA | |||
| Input Reverse Voltage | BVR | 5 | V | IR = 10A | |||
| Input Threshold Current (Low to High) | IFLH | 1.9 | 5 | mA | VO > 5V, IO = 0A | 6, 7, 18 | |
| Input Threshold Voltage (High to Low) | VFHL | 0.8 | V | VO | |||
| Input Capacitance | CIN | 33 | pF | f = 1 MHz, VF = 0 V | |||
| Output High Level Supply Current | ICCH | 1.9 | 3.0 | mA | Output Open, IF = 7 to 16 mA | 4, 5 | |
| Low Level Supply Current | ICCL | 2.1 | 3.0 | mA | Output Open, VF = -3 to +0.8 V | ||
| High level output current | IOH | -0.3 | A | VO = (VCC 1.5 V) | 1, 16 | ||
| -0.8 | A | VO = (VCC 3 V) | 2 | ||||
| Low level output current | IOL | 0.3 | A | VO = (VEE + 1.5 V) | 3, 17 | ||
| 0.8 | A | VO = (VEE + 3 V) | 2 | ||||
| High level output voltage | VOH | VCC - 0.6 | VCC - 0.35 | V | IF = 10mA, IO = -100mA | 1, 2, 14 | |
| Low level output voltage | VOL | VEE + 0.25 | VEE + 0.4 | V | IF = 0mA, IO = 100mA | 3, 15 | |
| UVLO Threshold (High) | VUVLO+ | 7.8 | V | VO > 5V, IF = 10 mA | 19 | ||
| UVLO Threshold (Low) | VUVLO- | 6.7 | V | VO | |||
| UVLO Hysteresis | UVLOHYS | 1.1 | V | ||||
| Switching Specification | |||||||
| Propagation Delay Time to High Output Level | tPHL | 50 | 120 | 200 | ns | Rg = 47, Cg = 3nF, f = 10 kHz, Duty Cycle = 50% IF = 7 to 16 mA, VCC = 15 to 30V VEE = ground | 8, 9, 10, 11, 12, 20 |
| Propagation Delay Time to Low Output Level | tPLH | 50 | 110 | 200 | |||
| Pulse Width Distortion | PWD | 20 | 70 | ||||
| Propagation delay difference | PDD | 100 | 100 | 3 | |||
| Output Rise Time (20 to 80%) | Tr | 35 | 20 | ||||
| Output Fall Time (80 to 20%) | Tf | 35 | |||||
| Common mode transient immunity at high level output | |CMH| | 35 | 50 | kV/s | TA = 25C, IF = 10 to 16 mA, VCM = 1500 V, VCC = 30 V | 21, 1 | |
| Common mode transient immunity at low level output | |CML| | 35 | 50 | kV/s | TA = 25C, VF = 0 V, VCM = 1500 V, VCC = 30 V | 2, 2 | |
| Isolation Characteristic | |||||||
| Withstand Insulation Test Voltage | VISO | 5000 | V | RH 50%, t = 1min, TA = 25oC | 1, 2 | ||
| Input-Output Resistance | RI-O | 6.5x1011 | VI-O = 500V DC | 1 | |||
| Input-Output Capacitance | CI-O | 1.0 | pF | f = 1MHz | 1 | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina