IGBT Gate Driver LITEON LTV-T350S-TA1 Optocoupler with Wide Temperature Range and MSL Level 1 Certification

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Product Description

Product Overview

The LTV-T350 optocoupler is an IGBT gate drive optocoupler designed for driving power IGBTs and MOSFETs in motor control inverter applications and power supply inverters. It features a 2.5A peak output current, low ICC, and high CMR, making it suitable for directly driving IGBTs up to 1200V/100A or driving discrete power stages for higher-rated IGBTs. The device operates reliably across a wide temperature range of -40C to +105C.

Product Attributes

Brand: Lite-On (implied by LTV prefix)
Certifications: UL/cUL Recognized (5000 VRMS/1 min), IEC/EN/DIN EN 60747-5-5 (VIORM = 630 Vpeak)
MSL Level: 1

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Electrical Optical Characteristics
Input Forward Voltage	VF	1.2	1.37	1.8	V	IF = 10mA
Input Forward Voltage Temperature Coefficient	VF/ T		-1.237		mV/OC	IF = 10mA
Input Reverse Voltage	BVR	5			V	IR = 10A
Input Threshold Current (Low to High)	IFLH	2		5	mA	VO > 5V, IO = 0A
Input Threshold Voltage (High to Low)	VFHL	0.8	1.26		V	VO < 5V, IO = 0A
Input Capacitance	CIN		33		pF	f = 1 MHz, VF = 0 V
Output High Level Supply Current	ICCH	1.8		3.0	mA	Output Open, IF = 7 to 16 mA
Low Level Supply Current	ICCL		2	3.0	mA	Output Open, VF = -3 to +0.8 V
High level output current	IOH	1.0		2.0	A	VO = (VCC 3.5 V)
Low level output current	IOL	1.0		2.0	A	VO = (VEE + 1.5 V)
High level output voltage	VOH	VCC - 2		VCC 1.1	V	IF = 10mA, IO = -100mA
Low level output voltage	VOL	VEE + 0.1		1	V	IF = 0mA, IO = 100mA
UVLO Threshold (ON)	VUVLO+	11.0	12.7	13.5	V	VO > 5V, IF = 10 mA
UVLO Threshold (OFF)	VUVLO-	9.5	11.2	12.0	V	VO < 5V, IF = 10 mA
UVLO Hysteresis	UVLOHYS		1.5		V
Switching Specification
Propagation Delay Time to High Output Level	tPLH	50	220	500	ns	Rg = 10, Cg = 10nF, f = 10 kHz, Duty Cycle = 50%, IF = 7 to 16 mA, VCC = 15 to 30V, VEE = ground
Propagation Delay Time to Low Output Level	tPHL	50	250	500	ns	Rg = 10, Cg = 10nF, f = 10 kHz, Duty Cycle = 50%, IF = 7 to 16 mA, VCC = 15 to 30V, VEE = ground
Pulse Width Distortion	PWD		30	200	ns
Propagation delay difference	PDD	-200		200
Output Rise Time (10 to 90%)	Tr	30			ns
Output Fall Time (90 to 10%)	Tf	30			ns
Common mode transient immunity at high level output	\|CMH\|	25	35		kV/s	TA = 25C, IF = 10 to 16 mA, VCM = 1500 V, VCC = 30 V
Common mode transient immunity at low level output	\|CML\|	25	35		kV/s	TA = 25C, VF = 0 V, VCM = 1500 V, VCC = 30 V
Isolation Characteristic
Withstand Insulation Test Voltage	VISO	5000			V	RH 40-60%, t = 1min, TA = 25C
Input-Output Resistance	RI-O		10¹²			VI-O = 500V DC
Input-Output Capacitance	CI-O		0.90		pF	f = 1MHz, TA = 25C