Photocoupler LITEON LTV-1008-TP1-G with high collector emitter voltage and halogen free Pb free materials
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Product Description
LTV-10XX-G Series Photocoupler
The LTV-10XX-G series photocouplers are designed for applications requiring high input-output isolation and high collector-emitter voltage. They feature a long mini-flat package, employ double transfer mold technology, and are available in Halogen Free and Pb Free options. These photocouplers are suitable for hybrid substrates requiring high-density mounting and programmable controllers.
Product Attributes
- Brand: LITE-ON Technology Corp.
- Origin: Taiwan, R.O.C.
- Certifications: UL 1577, Cul CA5A, VDE DIN EN60747-5-5 (VDE 0884-5), CQC GB4943.1-2011/ GB8898-2011, Nordic Safety (FIMKO/NEMKO/SEMKO/DEMKO), RoHS Compliance
- Material: Halogen Free, Pb Free
- Package Type: Long Mini-flat package
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | |
| Absolute Maximum Ratings | |||||
| Input Forward Current | IF | 60 | mA | ||
| Reverse Voltage | VR | 6 | V | ||
| Power Dissipation | P | 100 | mW | ||
| Junction Temperature | TJ | 125 | °C | ||
| Thermal Resistance Junction to Ambient | RthJ-A | 250 | °C/W | ||
| Thermal Resistance Junction to Case | RthJ-C | 180 | °C/W | ||
| Collector - Emitter Voltage | VCEO | 70 | V | ||
| Emitter - Collector Voltage | VECO | 7 | V | ||
| Collector Current | IC | 50 | mA | ||
| Collector Power Dissipation | PC | 150 | mW | ||
| Junction Temperature | TJ | 125 | °C | ||
| Total Power Dissipation | Ptot | 250 | mW | ||
| Isolation Voltage | Viso | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | |
| Operating Temperature | Topr | -55 ~ +110 | °C | ||
| Storage Temperature | Tstg | -55 ~ +150 | °C | ||
| Soldering Temperature | Tsol | 260 | °C | For 10 Seconds | |
| Electrical Optical Characteristics | |||||
| Input Forward Voltage | VF | — | 1.25 - 1.6 | V | IF=50mA |
| Reverse Current | IR | — | — | 10 µA | VR=4V |
| Terminal Capacitance | Ct | — | 50 | pF | V=0, f=1MHz |
| Output Collector Dark Current | ICEO | — | 10 - 100 | nA | VCE=20V, IF=0mA |
| Collector-Emitter Breakdown Voltage | BVCEO | 70 | — | — | V, IC=1mA, IF=0mA |
| Emitter-Collector Breakdown Voltage | BVECO | 7 | — | — | V, IE=100µA, IF=0mA |
| Collector Current | IC | 2.5 - 30 | mA | IF=5mA, VCE=5V | |
| Current Transfer Ratio | CTR | 50 - 600 | % | IF=5mA, VCE=5V, Ta=25°C | |
| Collector-Emitter Saturation Voltage | VCE(sat) | — | — | 0.3 | V, IF=10mA, IC=1mA |
| Isolation Resistance | Riso | 1×1012 | — | — | Ω, DC500V, 40 ~ 60% R.H. |
| Floating Capacitance | Cf | — | 0.3 | — | pF, V=0, f=1MHz |
| Response Time (Rise) | tr | — | 3 - 18 | µs | VCC=5V, IC=2mA, RL=100Ω |
| Response Time (Fall) | tf | — | 4.7 - 18 | µs | VCC=5V, IC=2mA, RL=100Ω |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina