high voltage isolation photocoupler LITEON CNY17-2 for power supply and sensor system applications

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Product Description

Product Overview

The CNY17-1 thru CNY17-4 series photocouplers offer high input-output isolation voltage (5,000Vrms) and fast response times. They are available in various package types including dual-in-line, wide lead spacing, surface mounting, and tape and reel for diverse application needs. These photocouplers are suitable for power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls.

Product Attributes

Brand: LITE-ON
Origin: Taiwan, R.O.C.
Certifications: UL, TUV, CSA, FIMKO, VDE, BSI, CQC
RoHS Compliance: Yes
ESD Rating: HBM 8000V/MM2000V
MSL Class: 1

Technical Specifications

Part Number Series	Features	Key Specifications	VDE Approved Models	Safety Limit Values	Isolation Specifications (VDE)
CNY17-1-V thru CNY17-4-V	Current transfer ratio (CTR : MIN. 40% at IF = 10mA, VCE = 5V), High collector-emitter voltage VCEO = 70V, High input-output isolation voltage Viso = 5,000Vrms, Response time (tr : TYP. 5s at VCE = 10V, IC = 2mA, RL = 100)	Creepage distance > 8.0 mm ; Clearance > 8.0 mm, Operating isolation voltage VIORM : 850V (Peak), Transient voltage VTR : 6000V (Peak), Pollution : 2	CNY17-1-V, CNY17-2-V, CNY17-3-V, CNY17-4-V, CNY17-1M-V, CNY17-2M-V, CNY17-3M-V, CNY17-4M-V, CNY17-1S-V, CNY17-2S-V, CNY17-3S-V, CNY17-4S-V, CNY17-1S-TA-V, CNY17-2S-TA-V, CNY17-3S-TA-V, CNY17-4S-TA-V, CNY17-1S-TA1-V, CNY17-2S-TA1-V, CNY17-3S-TA1-V, CNY17-4S-TA1-V	Current (Isi) : 400mA (Diode side), Power (Psi) : 700mW (Phototransistor side), Temperature(Tsi) : 175oC	Clearances distance (Between input and output) : 7.0mm (MIN.), Creepage distance (Between input and output) : 7.0mm (MIN.), Isolation thickness between input and output : 0.4mm (MIN.)

Electrical Characteristics

Parameter	Symbol	MIN.	TYP.	MAX.	UNIT	CONDITIONS
Forward Voltage	VF		1.45	1.65	V	IF=60mA
Reverse Current	IR			10	A	VR=6V
Terminal Capacitance	Ct			100	pF	V=0, f=1KHz
Collector Dark Current	ICEO			50	nA	VCE=10V, IF=0
Collector-Emitter Breakdown Voltage	BVCEO	70			V	IC=0.1mA IF=0
Emitter-Collector Breakdown Voltage	BVECO	7			V	IE=10A IF=0
Collector-Base Breakdown Voltage	BVCBO	70			V	IC=0.1mA IF=0
Current Transfer Ratio	CNY17-1 CTR	40		80	%	IF=10mA VCE=5V
Current Transfer Ratio	CNY17-2 CTR	63		125	%	IF=10mA VCE=5V
Current Transfer Ratio	CNY17-3 CTR	100		200	%	IF=10mA VCE=5V
Current Transfer Ratio	CNY17-4 CTR	160		320	%	IF=10mA VCE=5V
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IF=10mA IC=2.5mA
Isolation Resistance	Riso	100			G	DC500V 40 ~ 60% R.H.
Floating Capacitance	Cf			2	pF	V=0, f=1MHz
Response Time (Rise)	tr		5	10	s	VCE=10V, IC=2mA RL=100
Response Time (Fall)	tf		5	10	s

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit	Notes
Input Forward Current	IF	60	mA
Reverse Voltage	VR	6	V
Power Dissipation	P	100	mW
Output Collector - Emitter Voltage	VCEO	70	V
Emitter - Collector Voltage	VECO	7	V
Collector - Base Voltage	VCBO	70	V
Collector Current	IC	150	mA
Collector Power Dissipation	PC	150	mW
Total Power Dissipation	Ptot	250	mW
Isolation Voltage	Viso	5000	Vrms	*1 AC For 1 Minute, R.H. = 40 ~ 60%
Operating Temperature	Topr	-55 ~ +100	C
Storage Temperature	Tstg	-55 ~ +150	C
Soldering Temperature	Tsol	260	C	*2 For 10 Seconds