Product Overview
The MPC357X is a compact surface-mount optocoupler designed for high-density applications. It integrates a gallium arsenide light-emitting diode with a phototransistor, offering superior space-saving compared to DIP packages. Ideal for programmable controllers and various industrial and consumer electronics, the MPC357X provides reliable input-output isolation and a wide current transfer ratio range.
Product Attributes
- Brand: Msksemi
- Product Line: MPC357X
- Package Type: SOP-4
Technical Specifications
| Model | Package | Minimum Packaging | Current Transfer Ratio (CTR) Range | Input-Output Isolation Voltage (Viso) | Collector-Emitter Breakdown Voltage (BVCEO) | Applications |
| MPC357X | SOP-4 | 3000 | 50~600% (IF =5mA ,VCE =5V) | 3750 Vrms | 80V | Switching power supplies, smart meters, industrial control, measurement instruments, office equipment (e.g., copiers), home appliances (e.g., air conditioners, fans, water heaters) |
Electrical Characteristics (Ta=25)
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Input | Forward Voltage (VF) | IF=20mA | - | 1.2 | 1.4 | V |
| Reverse Current (IR) | VR=5V | - | - | 10 | A |
| Terminal Capacitance (Ct) | V=0, f= 1kHz | - | 30 | 250 | pF |
| Output | Collector Dark Current (ICEO) | VCE=70V | - | - | 100 | nA |
| Collector-Emitter Breakdown Voltage (BVCEO) | IC=0.1mA, IF=0 | 80 | - | - | V |
| Emitter-Collector Breakdown Voltage (BVECO) | IE=0.1mA, IF=0 | 7 | - | - | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IF=20mA, IC=1mA | - | 0.1 | 0.2 | V |
| Transfer Characteristics | Current Transfer Ratio (CTR) | IF=5mA, VCE=5V | 50 | - | 400 | % |
| Isolation Resistance (RISO) | DC1000V, 40~60%R.H. | 1x1011 | - | - | |
| Isolation Capacitance (Cf) | V=0, f=1MHz | - | 0.6 | 1.0 | pF |
| Switching Time | Rise Time (Tr) | VCE=10V, IC=2mA, RL=100 | - | 4 | 18 | s |
| Fall Time (Tf) | VCE=10V, IC=2mA, RL=100 | - | 3 | 18 | s |
Absolute Maximum Ratings (Ta=25)
| Parameter | Symbol | Rating | Unit |
| Input | Forward Current (IF) | 50 | mA |
| Forward Pulse Current (IFP) | 1 | A |
| Reverse Voltage (VR) | 6 | V |
| Power Dissipation (P) | 70 | mW |
| Output | Collector Power Dissipation (PC) | 150 | mW |
| Collector Current (IC) | 50 | mA |
| Collector-Emitter Voltage (VCEO) | 80 | V |
| General | Total Power Dissipation (Ptot) | 200 | mW |
| Isolation Voltage (Viso) | 3750 | Vrms |
| Operating Temperature (Topr) | -55~+110 | |
| Storage Temperature (Tstg) | -55~+125 | |
| Soldering Temperature (Tsol) | 260 | |
Package Information
| Package | Dimensions (approx.) |
| SOP-4 | Refer to external dimension drawing |
External Dimensions
![External Dimensions Diagram]()
Important Notes
MSKSEMI Semiconductor products are not intended for use in life-support systems, aircraft control systems, or other applications where failure could lead to serious injury or material damage. Users must consult with MSKSEMI Semiconductor before using products in such applications. MSKSEMI Semiconductor is not responsible for equipment failures resulting from exceeding rated values. Product specifications describe performance in an independent state and are not guarantees when mounted in customer products. Customers should evaluate devices in their own equipment. MSKSEMI Semiconductor strives for high-quality products, but semiconductor products have a probability of failure. Design equipment with safety measures to prevent accidents. Export of products may be subject to export control laws and regulations. Reproduction or transmission of this publication requires prior written permission from MSKSEMI Semiconductor. Information herein is for example only and not guaranteed for volume production. Specifications are subject to change without notice.
