Digital Isolator NOVOSENSE NSI8140W0 Providing Stable Signal Isolation and Wide Supply Voltage Range
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Product Description
Product Overview
The NSi814x devices are high reliability quad-channel digital isolators offering excellent insulation withstand voltages (up to 5kVrms), high electromagnetic immunity, and low power consumption. They support data rates up to 150Mbps and boast a common-mode transient immunity (CMTI) of up to 150kV/us. These devices feature configurable digital channel directions and default output levels upon power loss, simplifying level shifting with their wide supply voltage range. Enhanced system-level EMC performance ensures high reliability and stability. An AEC-Q100 (Grade 1) option is available for all devices.
Product Attributes
- Brand: NOVOSENSE
- Certifications: UL1577, CQC (GB4943.1-2011), CSA (Component Notice 5A), DIN VDE V 0884-11:2017-01
- AEC-Q100 Grade 1 available
- RoHS-compliant packages: SOIC-16 narrow body, SOIC-16 wide body
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Comments |
| Absolute Maximum Ratings | VDD1, VDD2 | -0.5 | 6.5 | V | Power Supply Voltage | |
| VINA,VINB, VINC, VIND | -0.4 | VDD+0.4 | V | Maximum Input Voltage | ||
| VOUTA,VOUTB, VOUTC | -0.4 | VDD+0.4 | V | Maximum Output Voltage | ||
| VINA, VINB, VINC,VOUTA, VOUTB,VOUTC | -0.8 | VDD+0.8 | V | Maximum Input/Output Pulse Voltage (Pulse width <100ns, duty cycle <10%) | ||
| CMTI | 150 | kV/us | Common-Mode Transients | |||
| Io | -15 | 15 | mA | Output current | ||
| VIOSM | 5.3 | kV | Maximum Surge Isolation Voltage | |||
| Topr | -40 | 125 | Operating Temperature | |||
| Tstg | -40 | 150 | Storage Temperature | |||
| HBM | 6000 | V | Electrostatic discharge | |||
| CDM | 2000 | V | Electrostatic discharge | |||
| VDDPOR | 2.2 | V | Power on Reset | |||
| VDD HYS | 0.1 | V | POR threshold Hysteresis | |||
| Electrical Characteristics | VIT | 1.6 | V | Input Threshold | ||
| VIT_HYS | 0.4 | V | Input Threshold Hysteresis | |||
| VIH | 2 | V | High Level Input Voltage | |||
| VIL | 0.8 | V | Low Level Input Voltage | |||
| VOH | VDD- 0.3 | V | High Level Output Voltage (IOH =- 4mA) | |||
| VOL | 0.3 | V | Low Level Output Voltage (IOL = 4mA) | |||
| Rout | 50 | ohm | Output Impedance | |||
| Ipull | 8 | 15 | uA | Input Pull high or low Current | ||
| trbs | 40 | usec | Start Up Time after POR | |||
| CMTI | 100 | 150 | kV/us | Common Mode Transient Immunity | ||
| DR | 0 | 150 | Mbps | Data Rate | ||
| Recommended Operating Conditions | VDD1, VDD2 | 2.5 | 5.5 | V | Power Supply Voltage | |
| Topr | -40 | 125 | Operating Temperature | |||
| Thermal Characteristics | JA (WB/NB-SOIC-16) | 78.9 | C/W | IC Junction-to-Air Thermal Resistance | ||
| JCtop (WB/NB-SOIC-16) | 41.6/41.1 | C/W | Junction-to-case (top) thermal resistance | |||
| JB (WB/NB-SOIC-16) | 43.6/49.5 | C/W | Junction-to-board thermal resistance | |||
| Supply Current (Typical @ VDD1=5V, VDD2=5V, Ta=25) | IDD1(Q0) NSi8140 | 0.894 | 1.50 | mA | All Input 0V for NSi8140x0 / All Input at supply for NSi8140x1 | |
| IDD2(Q0) NSi8140 | 2.326 | 3.5 | mA | |||
| IDD1(1M) NSi8140 | 3.087 | 4.63 | mA | All Input with 1Mbps, CL=15pF | ||
| IDD2(1M) NSi8140 | 2.728 | 4.09 | mA | |||
| IDD1(1M) NSi8141 | 3.07 | 4.6 | mA | All Input with 1Mbps, CL=15pF | ||
| IDD2(1M) NSi8141 | 3.064 | 4.6 | mA | |||
| IDD1(1M) NSi8142 | 3.06 | 4.6 | mA | All Input with 1Mbps, CL=15pF | ||
| IDD2(1M) NSi8142 | 3.108 | 4.7 | mA | |||
| IDD1(100M) NSi8140 | 3.918 | 5.88 | mA | All Input with 100Mbps, CL=15pF | ||
| IDD2(100M) NSi8140 | 37.06 | 55.6 | mA | |||
| Propagation Delay | t PLH NSi8140/8141/8142 | 5 | 15 | ns | See Figure 2.5 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina