Optocoupler with 850 nm AlGaAs LED featuring NQUNXIN QX6N130-CuH-S high speed photo detector logic gate
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Product Description
Product Overview
The QX6N130 optocoupler features an 850 nm AlGaAS LED optically coupled to a very high-speed integrated photo-detector logic gate with a strobable output. It offers a high bit rate of 1Mbit/s, high input-output isolation voltage (5000 Vrms), and a wide operating temperature range (-40C to +125C). This device is suitable for applications such as ground loop elimination, LSTTL to TTL/CMOS conversion, line receivers, data transmission, switching power supplies, and computer peripheral interfaces. It meets reinforced insulation standards and safety certifications including UL 1577, VDE DIN EN60747-5-5, and CQC11-471543-2022.
Product Attributes
- Brand: QUNXIN ()
- Origin: China
- Certifications: UL 1577, VDE DIN EN60747-5-5 (VDE 0884-5), CQC11-471543-2022
- Lead Frame Material: Copper (Cu)
- Epoxy Type: Halogen-free (H)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit | Remark |
|---|---|---|---|---|---|---|---|
| Insulation and Safety related specifications | |||||||
| Creepage Distance | L | >7.0 | mm | Measured from input terminals to output terminals, shortest distance path along body | |||
| Clearance Distance | L | >7.0 | mm | Measured from input terminals to output terminals, shortest distance through air | |||
| Insulation Thickness | DTI | >0.4 | mm | Insulation thickness between emitter and detector | |||
| Peak Isolation Voltage | VIORM | DIN/EN/IEC EN60747-5-5 | 1500 | Vpeak | |||
| Transient isolation voltage | VIOTM | DIN/EN/IEC EN60747-5-5 | 7000 | Vpeak | |||
| Isolation Voltage | Viso | For 1 min | >5000 | Vrms | |||
| Absolute Maximum Ratings (TA=25) | |||||||
| Forward Current | IF | 50 | mA | Input | |||
| Reverse Voltage | VR | 5 | V | Input | |||
| Input Power Dissipation | PI | 100 | mW | Input | |||
| Supply Voltage | VCC | 6.5 | V | Output | |||
| Output Current | IO | 10 | mA | Output | |||
| Output Voltage | VO | -0.5 | to VCC+0.5 | V | Output | ||
| Output Collector Power Dissipation | PO | 70 | mW | Output | |||
| Operating Temperature | Topr | -40 | to +125 | ||||
| Storage Temperature | Tstg | -55 | to +125 | ||||
| Soldering Temperature | Tsol | 260 | |||||
| Electro-optical Characteristics (TA=25) | |||||||
| Input Forward Voltage | VF | IF=10mA | 1.38 | 1.75 | V | ||
| Input Reverse Breakdown Voltage | BVR | IR=10A | 5 | 50 | V | ||
| Input Capacitance | CIN | V=0, f=1MHz | 70 | pF | |||
| Input Diode Temperature Coefficient | VF/TA | IF=10mA | -1.4 | mV/C | |||
| High Level Supply Current | ICCH | IF=0mA, VCC=5.5V, VO=Open | 0.6 | 1.3 | mA | Output | |
| Low Level Supply Current | ICCL | IF=10mA, VCC=5.5V, VO=Open | 0.62 | 1.3 | mA | Output | |
| High Level Output Current | IOH | IF=250A VCC=VO=5.5V | 100 | A | Output | ||
| Low Level Output Voltage | VOL | IF=5mA VCC=5.5V IOL=13mA | 0.16 | 0.6 | V | Output | |
| Input Threshold Current | IFT | VCC=5.5V IOL=13mA VO<0.6V | 2.7 | 5 | mA | ||
| Isolation Voltage | VISO | RH<50% II-O50A | 5000 | VRMS | |||
| Isolation Resistance | RI-O | VI-O=500V | 1012 | ||||
| Isolation Capacitance | CI-O | V=0, f=1MHz | 0.6 | pF | |||
| Switching Specification (TA=25) | |||||||
| Propagation Delay Time to Output High Level | TPLH | IF=7.5mA VCC=5.0V CL=15pF RL=350 | 300 | 540 | 1000 | ns | |
| Propagation Delay Time to Output Low Level | TPHL | IF=7.5mA VCC=5.0V CL=15pF RL=350 | 70 | 150 | 300 | ns | |
| Pulse Width Distortion (|TPHLTPLH|) | PWD | 400 | 700 | ns | |||
| Output Rise Time (10% 90%) | tr | IF=7.5mA VCC=5.0V CL=15pF RL=350 | 30 | ns | |||
| Output Fall Time (90% - 10%) | tf | IF=7.5mA VCC=5.0V CL=15pF RL=350 | 10 | ns | |||
| Common Mode Transient Immunity (at Output High Level) | |CMH| | IF=0mA, VCC=5V |VCM|=50V(Peak) VO(MIN)=2.0V, RL=350 | 5 | 10 | kV/s | ||
| Common Mode Transient Immunity (at Output Low Level) | |CML| | IF=10mA, VCC=5V |VCM|=50V(Peak) VO(MAX)=0.8V, RL=350 | 5 | 10 | kV/s | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina