Space qualified OPTEK HCC1000 optoisolator with MIL PRF 19500 TXV level and radiation hardened design
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Hi-Reliability RAD Capable Optoisolator
These devices are similar to Opteks 4N series of opto isolators, processed per MIL-PRF-19500 TXV level and capable of modification per customer SCDs. Each device consists of an IR LED and NPN transistor housed in a hermetic TO-78 metal can (HCC1000) or a 6-pin SMT LCC package (HCC1001). They are designed for circuit electrical isolation in demanding space applications such as satellites, launch vehicles, space vehicles, and planetary rovers. Key features include Total Ionizing Dose (TID) capability to 100Krad(Si)/cm, neutron capability to 1E12 neutrons (14MeV), 1 KV electrical isolation, and a base contact for conventional transistor biasing.
Product Attributes
- Brand: TT electronics plc
- Product Line: OPTEK Technology
- Certifications: MIL-PRF-19500 TXV level
- Radiation Standards: MIL-STD-883 Method 1019.7, ASTM F1892-06, MIL-STD-883 Method 1017.2, ASTM E 77294
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Storage Temperature Range | -55 | 150 | C | TA = 25 C unless otherwise noted | ||
| Operating Temperature Range | -55 | 150 | C | TA = 25 C unless otherwise noted | ||
| Input-to-Output Isolation Voltage | 1.00 | kVDC | Measured with input leads shorted together and output leads shorted together. | |||
| Lead Soldering Temperature (TO-78 Metal Can) | 260 | C | [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] | |||
| Soldering Temperature (SMD) | 215 | C | Vapor Phase Reflow for 30 seconds | |||
| Input Diode (LED) Forward DC Current | IF | 40 | mA | (65 C or below) | ||
| Input Diode (LED) Reverse Voltage | 2 | V | ||||
| Input Diode (LED) Power Dissipation | 60 | mW | Derate linearly 1.0 mW/C above 65 C. | |||
| Output Phototransistor Continuous Collector Current | IC | 50 | mA | |||
| Output Phototransistor Collector-Emitter Voltage | VCEO | 40 | V | |||
| Output Phototransistor Collector-Base Voltage | VCBO | 45 | V | |||
| Output Phototransistor Emitter-Base Voltage | VEBO | 7.0 | V | |||
| Output Phototransistor Power Dissipation | 300 | mW | Derate linearly 3.0 mW/C above 25 C. | |||
| Performance Electrical Characteristics | ||||||
| Forward Voltage | VF | 0.80 | 1.00 | 1.70 | V | IF = 10.0 mA |
| Forward Voltage | VF | 0.70 | 1.9 | 1.50 | V | IF = 10.0 mA, TA = -55 C |
| Forward Voltage | VF | 1.50 | V | IF = 10.0 mA, TA = 125 C | ||
| Reverse Current | IR | 100 | A | VR= 2.0 V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 1.0 mA, IB= 0, IF= 0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 45 | V | IC = 100 A, IB= 0, IF= 0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 7 | V | IE = 100 A, IC= 0, IF= 0 | ||
| Collector-Emitter Dark Current | IC(OFF) 1 | 100 | nA | VCE = 20 V, IB= 0, IF= 0 | ||
| Collector-Emitter Dark Current | IC(OFF) 2 | 100 | A | VCE = 20 V, IB= 0, IF= 0, TA = 100 C | ||
| Collector-Base Dark Current | ICB(OFF) | 10 | nA | VCB = 20 V, IE= 0, IF= 0 | ||
| On-State Collector Current | IC(ON) | 1 | 15 | mA | IF = 1.0 mA, VCE = 1.0 V, IB = 0 | |
| On-State Collector Current | IC(ON) | 10 | 15 | mA | IF = 15.0 mA, VCE = 1.0 V, IB = 0 | |
| On-State Collector Current | IC(ON) | 2.8 | mA | IF = 10.0 mA, VCE = 5.0 V, IB = 0 | ||
| On-State Collector Current | IC(ON) | 2.0 | mA | IF = 15.0 mA, VCE = 5.0 V, IB = 0 | ||
| On-State Collector Current | IC(ON) | mA | IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = -55 C | |||
| On-State Collector Current | IC(ON) | mA | IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = 100 C | |||
| On-State Collector Base | ICB(ON) | 30 | A | VCB = 5 V, IE = 0, IF = 10 mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.30 | V | IF = 20.0 mA, IC = 10.0 mA, IB = 0 | ||
| DC Current Gain | HFE | 100 | VCE = 5.0 V , IC = 10.0 mA, IF = 0 mA | |||
| Resistance (Input-to-Output) | RIO | 1011 | VI-O = 1000 VDC | |||
| Capacitance (Input-to-Output) | CIO | 5 | pF | VI-O = 0 V, f = 1.0 MHz | ||
| Rise and Fall Time | TR, TF | 20 | s | VCC = 10.0 V , IF = 10.0 mA, RL = 100 | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina