High isolation voltage RENESAS PS2801C-4-F3-A/M photocoupler in plastic SSOP package for industrial electronic systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PS2801C-1 and PS2801C-4 are high isolation voltage SSOP photocouplers designed for high-density applications, offering excellent cost performance. They feature a GaAs light emitting diode and an NPN silicon phototransistor, with a shield effect to block ambient light. Key advantages include high isolation voltage (2500 Vr.m.s.), a small and thin package, and high collector-to-emitter voltage (80 V). These devices are suitable for applications such as programmable logic controllers, measuring instruments, power supplies, and hybrid ICs.
Product Attributes
- Brand: Not explicitly stated, but implied by datasheet reference R08DS0072EJ0500.
- Origin: Made in Taiwan or Made in Japan (indicated by marking example).
- Material: Plastic SSOP package.
- Color: Not specified.
- Certifications: UL, CSA, BSI, VDE (optional).
Technical Specifications
| Parameter | Symbol | PS2801C-1 | PS2801C-4 | Unit | Conditions | |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 30 | 30 | mA/ch | ||
| Reverse Voltage | VR | 6 | 6 | V | ||
| Power Dissipation Derating | PD/C | 0.6 | 0.8 | mW/C | ||
| Power Dissipation | PD | 60 | 80 | mW/ch | ||
| Peak Forward Current | IFP | 0.5 | 0.5 | A/ch | PW = 100 s, Duty Cycle = 1 % | |
| Transistor Collector to Emitter Voltage | VCEO | 80 | 80 | V | ||
| Emitter to Collector Voltage | VECO | 5 | 5 | V | ||
| Collector Current | IC | 30 | 30 | mA/ch | ||
| Power Dissipation Derating | PC/C | 1.2 | 1.2 | mW/C | ||
| Power Dissipation | PC | 120 | 120 | mW/ch | ||
| Isolation Voltage | BV | 2 500 | 2 500 | Vr.m.s. | AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together (PS2801C-1). Pins 1-8 shorted together, 9-16 shorted together (PS2801C-4). | |
| Operating Ambient Temperature | TA | 55 to +100 | C | |||
| Storage Temperature | Tstg | 55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | 1.2 TYP. 1.4 MAX. | V | IF = 5 mA | ||
| Reverse Current | IR | 5 MAX. | A | VR = 5 V | ||
| Terminal Capacitance | Ct | 10 TYP. | pF | V = 0 V, f = 1.0 MHz | ||
| Collector to Emitter Dark Current | ICEO | 100 MAX. | nA | VCE = 80 V, IF = 0 mA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | 50 MIN. 400 MAX. | % | IF = 5 mA, VCE = 5 V | ||
| Collector Saturation Voltage | VCE (sat) | 0.13 TYP. 0.3 MAX. | V | IF = 10 mA, IC = 2 mA | ||
| Isolation Resistance | RI-O | 1011 MIN. | VI-O = 1.0 kVDC | |||
| Isolation Capacitance | CI-O | 0.4 TYP. | pF | V = 0 V, f = 1.0 MHz | ||
| Rise Time | tr | 5 TYP. | s | VCC = 5 V, IC = 2 mA, RL = 100 | ||
| Fall Time | tf | 7 TYP. | s | |||
| Turn-on Time | ton | 10 TYP. | s | |||
| Turn-off Time | toff | 7 TYP. | s | |||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina