High speed switching photocoupler RENESAS PS2703-1-F3-A with integrated GaAs LED and NPN phototransistor
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PS2703-1 is a high isolation voltage, high collector-to-emitter voltage SOP (Small Outline Package) type photocoupler. It integrates a GaAs light-emitting diode and an NPN silicon phototransistor, designed for high-density applications with excellent ambient light shielding. Key features include high isolation voltage (3750 Vr.m.s.), high collector-to-emitter voltage (120 V), and high-speed switching capabilities (10 s TYP. for rise and fall times). This product is suitable for various applications such as hybrid ICs, telephone/FAX systems, FA/OA equipment, programmable logic controllers, and power supplies.
Product Attributes
- Brand: Not explicitly stated, but associated with R08DS0098EJ0302 series.
- Origin: Made in Taiwan or Made in Japan (indicated by marking).
- Certifications: UL (UL1577), CSA (CAN/CSA-C22.2 No. 62368-1), BSI (BS EN 62368-1), VDE (DIN EN 60747-5-5 - Option).
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 50 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Power Dissipation Derating | PD/C | 0.8 | mW/C | |||
| Power Dissipation | PD | 80 | mW | |||
| Peak Forward Current | IFP | PW = 100 s, Duty Cycle = 1% | 1 | A | ||
| Transistor Collector to Emitter Voltage | VCEO | 120 | V | |||
| Emitter to Collector Voltage | VECO | 6 | V | |||
| Collector Current | IC | 30 | mA | |||
| Power Dissipation Derating | PC/C | 1.5 | mW/C | |||
| Power Dissipation | PC | 150 | mW | |||
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 3 750 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | -55 | +100 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 5 mA | 1.1 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1 MHz | 30 | pF | ||
| Transistor Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 120 V | 100 | nA | ||
| Current Transfer Ratio (IC/IF) | CTR | IF = 5 mA, VCE = 5 V | 50 | 150 | 400 | % |
| Current Transfer Ratio (IC/IF) | CTR | IF = 1 mA, VCE = 5 V | 10 | 80 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O | VI-O = 1 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1 MHz | 0.4 | pF | ||
| Rise Time | tr | VCC = 5 V, IC = 2 mA, RL = 1 k | 10 | s | ||
| Fall Time | tf | 10 | s | |||
| Turn-on Time | ton | 13 | s | |||
| Turn-off Time | toff | 11 | s | |||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina