Optocoupler RENESAS PS8352AL2-E3-AX Featuring Double Protection and Reinforced Insulation for Current Sensing

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Product Description

Product Overview

The PS8352AL2 is an optically coupled isolation amplifier designed for high common mode transient immunity (CMTI) and high linearity. It utilizes a high-accuracy sigma-delta A/D converter and an AlGaAs light-emitting diode on the input, and a high-accuracy D/A converter on the output. This device is ideal for current and voltage sensing applications in AC servo, inverters, solar power conditioners, and measurement equipment.

Product Attributes

Brand: Renesas Electronics (implied by datasheet R08DS0132EJ0101)
Certifications: UL approved (UL1577, Double protection), CSA approved (CAN/CSA-C22.2 62368-1, Reinforced insulation), VDE approved (DIN EN 60747-5-5, Option)
Material: Pb-Free product
Package Type: 8-pin DIP lead bending type for long creepage distance for surface mount (L2)
Embossed Tape Product: PS8352AL2-E3 (2 000 pcs/reel)

Technical Specifications

Parameter	Symbol	Conditions	MIN.	TYP.	MAX.	Unit
ABSOLUTE MAXIMUM RATINGS
Operating Ambient Temperature	TA		-40		+110	°C
Storage Temperature	Tstg		-55		+125	°C
Supply Voltage	VDD1, VDD2		0		5.5	V
Input Voltage	VIN+, VIN-		-2		VDD1 +0.5	V
2 Seconds Transient Input Voltage	VIN+, VIN-		-6		VDD1 +0.5	V
Output Voltage	VOUT+, VOUT-		-0.5		VDD2 +0.5	V
Isolation Voltage	BV	AC voltage for 1 minute at TA = 25 °C , RH = 60 % between input and output. Pins 1-4 shorted together, 5-8 shorted together.			5000	V_r.m.s.
RECOMMENDED OPERATING CONDITIONS
Operating Ambient Temperature	TA		-40		110	°C
Supply Voltage	VDD1, VDD2		4.5		5.5	V
Input Voltage (Accurate and Linear)	VIN+, VIN-	*1	-200		200	mV
ELECTRICAL CHARACTERISTICS (DC Characteristics)
Input Offset Voltage	Vos	TA = 25 °C		-0.25		mV
Input Offset Voltage	Vos		-3		3	mV
Input Offset Voltage Drift vs. Temperature	\|dVos/dTA\|			1.6	10	µV/°C
Gain	G	*1 200 mV ≤ VIN+ ≤ 200 mV, TA = 25 °C	7.92	8	8.08	V/V
Gain Drift vs. Temperature	\|dG/dTA\|			0.0006		V/V°C
VOUT Non-linearity (200 mV)	NL200	*2 -200 mV ≤ VIN+ ≤ 200 mV		0.014	0.35	%
VOUT Non-linearity (100 mV)	NL100	*2 -100 mV ≤ VIN+ ≤ 100 mV		0.011	0.2	%
Maximum Input Voltage before VOUT Clipping	\|VIN+\|MAX.				320	mV
Input Supply Current	IDD1	VIN+ = 400 mV		13.5	16	mA
Output Supply Current	IDD2	VIN+ = -400 mV		7.8	16	mA
Input Bias Current	IIN+	VIN+ = 0V		-0.65		µA
Low Level Saturated Output Voltage	VOL	VIN+ = -400 mV			1.29	V
High Level Saturated Output Voltage	VOH	VIN+ = 400 mV			3.8	V
Output Voltage (VIN+ = VIN- = 0 V)	VOCM	VIN+ = VIN- = 0 V		2.5	2.8	V
Output Short-circuit Current	\|IOSC\|				20	mA
Equivalent Input Resistance	RIN				450	kΩ
VOUT Output Resistance	ROUT				4	Ω
Input DC Common-Mode Rejection Ratio	CMRRIN	*3	76			dB
ELECTRICAL CHARACTERISTICS (AC Characteristics)
VOUT Bandwidth (-3 dB)	fC	VIN+ = 200 mVp-p, sine wave		50	100	kHz
VOUT Noise	NOUT	VIN+ = 0 V			15.6	mV_r.m.s.
VIN to VOUT Signal Delay (50 to 10%)	tPD10	VIN+ = 0 to 150 mV step		2.4	3.3	µs
VIN to VOUT Signal Delay (50 to 50%)	tPD50			4.2	5.6	µs
VIN to VOUT Signal Delay (50 to 90%)	tPD90			6.1	9.9	µs
VOUT Rise Time/Fall Time (10 to 90%)	tr/tf	VIN+ = 0 to 150 mV step		3.1	6.6	µs
Common Mode Transient Immunity	CMTI	*1 VCM = 0.5 kV, tr = 20 ns, TA = 25 °C	10	28		kV/µs
Power Supply Noise Rejection	PSR	*2 f = 1 MHz			40	mV_r.m.s.