SOP multi-photocoupler RENESAS PS2702-1-F3-A featuring high current transfer ratio and speed switching
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Product Description
Product Overview
The PS2702-1 is a high isolation voltage Darlington transistor SOP multi-photocoupler designed for high-density applications. It features a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor, offering a high current transfer ratio (CTR = 2,000% TYP.) and high-speed switching. The device is mounted in a small and thin SOP package with a shield effect to block ambient light, making it suitable for various electronic systems.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet numbering R08DS0099EJ0302)
- Origin: Made in Taiwan / Made in Japan (indicated by marking example)
- Certifications: UL approved (UL1577), CSA approved (CAN/CSA-C22.2 No. 62368-1), BSI approved (BS EN 62368-1), VDE approved (DIN EN 60747-5-5 Option)
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 5 mA | 1.1 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | µA | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1 MHz | 30 | pF | ||
| Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 40 V | 400 | nA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = 1 mA, VCE = 2 V | 200 | 2000 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = 1 mA, IC = 2 mA | 1.0 | V | ||
| Isolation Resistance | RI-O | VI-O = 1 kVDC | 1011 | Ω | ||
| Isolation Capacitance | CI-O | V = 0 V, f = 1 MHz | 0.4 | pF | ||
| Rise Time | tr | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 70 | µs | ||
| Fall Time | tf | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 60 | µs | ||
| Turn-on Time | ton | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 90 | µs | ||
| Turn-off Time | toff | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 60 | µs | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 50 | mA | |||
| Reverse Voltage | VR | 6.0 | V | |||
| Power Dissipation (Diode) | PD | 80 | mW | |||
| Peak Forward Current | IFP | PW = 100 µs, Duty Cycle = 1% | 1 | A | ||
| Collector to Emitter Voltage | VCEO | 40 | V | |||
| Emitter to Collector Voltage | VECO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Power Dissipation (Transistor) | PC | 150 | mW | |||
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25°C, RH = 60% | 3750 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | -55 | +100 | °C | ||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina