Compact ultra small flat lead photocoupler RENESAS PS2915-1-F3-AX with high current transfer ratio and AC input response
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Product Description
Product Overview
The PS2915-1 is a high CTR, AC input response type 4-pin ultra-small flat-lead photocoupler. It integrates GaAs light emitting diodes and an NPN silicon phototransistor in a compact package designed for high-density mounting. This device offers a significant reduction in mounting area (approximately 30%) compared to the PS28xx series, making it ideal for space-constrained applications. Key features include a high current transfer ratio (CTR), high isolation voltage, and an ultra-small flat-lead package. Applications include DC/DC converters and modem/PC cards.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet format)
- Certifications: UL approved (UL1577), BSI approved (BS EN 62368-1), VDE approved (DIN EN 60747-5-5 - Option)
- Package Type: Ultra small flat-lead
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 1 mA | 0.9 | 1.3 | V | |
| Terminal Capacitance | Ct | V = 0 V, f = 1 MHz | 30 | pF | ||
| Transistor Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 40 V | 100 | nA | ||
| Coupled Current Transfer Ratio | CTR | IF = 1 mA, VCE = 5 V | 100 | 200 | 400 | % |
| Collector Saturation Voltage | VCE (sat) | IF = 1 mA, IC = 0.2 mA | 0.13 | 0.3 | V | |
| Isolation Resistance | RI-O | VI-O = 1 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1 MHz | 0.4 | pF | ||
| Rise Time | tr | VCC = 5 V, IC = 2 mA, RL = 1 k | 5 | s | ||
| Fall Time | tf | VCC = 5 V, IC = 2 mA, RL = 1 k | 10 | s | ||
| Turn-on Time | ton | VCC = 5 V, IF = 1 mA, RL = 5 k | 40 | s | ||
| Storage Time | ts | VCC = 5 V, IF = 1 mA, RL = 5 k | 10 | s | ||
| Turn-off Time | toff | VCC = 5 V, IF = 1 mA, RL = 5 k | 120 | s | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current | IF | 50 | mA | |||
| Peak Forward Current | IFP | PW = 100 s, Duty Cycle = 1 % | 0.5 | A | ||
| Power Dissipation (Diode) | PD | 60 | mW | |||
| Transistor Collector to Emitter Voltage | VCEO | 40 | V | |||
| Transistor Emitter to Collector Voltage | VECO | 5 | V | |||
| Transistor Collector Current | IC | 40 | mA | |||
| Power Dissipation (Transistor) | PC/C | Derating | 1.2 | mW/C | ||
| Power Dissipation (Transistor) | PC | 120 | mW | |||
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25 C, RH = 60 % | 2 500 | Vr.m.s. | ||
| Total Power Dissipation | PT | 160 | mW | |||
| Operating Ambient Temperature | TA | -55 | +100 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina