High Speed Switching Optocoupler RENESAS PS2502L-1-F3-A with GaAs LED and Darlington Phototransistor
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Product Description
PS2502-1, -4, PS2502L-1, -4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
The PS2502-1, -4 and PS2502L-1, -4 are optically coupled isolators featuring a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2502-1, -4 are housed in a plastic DIP, while the PS2502L-1, -4 are lead-bending types (Gull-wing) for surface mounting. These transistors offer high isolation voltage, high current transfer ratio, and high-speed switching, making them suitable for applications such as power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Japan / Made in Taiwan
- Material: GaAs light emitting diode, NPN silicon darlington phototransistor
- Color: Not specified
- Certifications: UL approved (UL1577, Double protection)
Technical Specifications
| Parameter | Symbol | PS2502-1, PS2502L-1 | PS2502-4, PS2502L-4 | Unit | Conditions | MIN. | TYP. | MAX. | |
| Diode Characteristics | VR | 6 | 6 | V | |||||
| IF | 80 | 80 | mA/ch | (DC) | |||||
| PD | 150 | 120 | mW/ch | ||||||
| Transistor Characteristics | VCEO | 40 | 40 | V | |||||
| VECO | 6 | 6 | V | ||||||
| IC | 200 | 160 | mA/ch | ||||||
| PC | 150 | 120 | mW/ch | ||||||
| Isolation Voltage | BV | 5000 | 5000 | Vr.m.s. | AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together (PS2502-1, PS2502L-1). Pins 1-8 shorted together, 9-16 shorted together (PS2502-4, PS2502L-4). | ||||
| Operating Ambient Temperature | TA | -55 to +100 | C | ||||||
| Storage Temperature | Tstg | -55 to +150 | C | ||||||
| Electrical Characteristics | VF | 1.17 | 1.4 | V | IF = 10 mA | ||||
| IR | 5 | A | VR = 5 V | ||||||
| Ct | 50 | pF | V = 0 V, f = 1.0 MHz | ||||||
| ICEO | 400 | nA | VCE = 40 V, IF = 0 mA | ||||||
| VCE(sat) | 1.0 | V | IF = 1 mA, IC = 2 mA | ||||||
| Coupled Current Transfer Ratio | CTR | 200 | 2000 | % | IF = 1 mA, VCE = 2 V | ||||
| Isolation Resistance | RI-O | 1011 | VI-O = 1.0 kVDC | ||||||
| Isolation Capacitance | CI-O | 0.5 | pF | V = 0 V, f = 1.0 MHz | |||||
| Rise Time | tr | 100 | s | VCC = 10 V, IC = 2 mA, RL = 100 | |||||
| Fall Time | tf | 100 | s | ||||||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina