Surface mount optocoupler RENESAS PS2561FL-1Y-F3-A with 5000 Vrms isolation voltage and UL certification
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Product Description
Product Overview
The PS2561F-1 and PS2561FL-1 are optically coupled isolators featuring a GaAs light emitting diode and an NPN silicon phototransistor. Designed for high-temperature operation up to 110C, these photocouplers offer high isolation voltage (5000 Vr.m.s.), high collector-to-emitter voltage (80V), and high-speed switching capabilities. The PS2561F-1 is available in a plastic DIP package, while the PS2561FL-1 is a lead-bending type (Gull-wing) suitable for surface mounting. Applications include power meters, telephone/FAX systems, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Taiwan / Made in Japan
- Material: Plastic DIP (PS2561F-1), Lead-bending type (PS2561FL-1)
- Color: Not specified
- Certifications: UL approved (No. E72422)
- Pb-Free Product: Yes
- Halogen Free Product: Yes
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions | Min. | Typ. | Max. |
| Diode Characteristics | |||||||
| Reverse Voltage | VR | 6 | V | ||||
| Forward Current (DC) | IF | 30 | mA | ||||
| Power Dissipation | PD | 150 | mW | ||||
| Derating | PD/C | 1.5 | mW/C | ||||
| Peak Forward Current*1 | IFP | 1 | A | PW = 100 s, Duty Cycle = 1% | |||
| Forward Voltage | VF | V | IF = 10 mA | 1.2 | 1.4 | ||
| Reverse Current | IR | A | VR = 5 V | 5 | |||
| Terminal Capacitance | Ct | pF | V = 0 V, f = 1.0 MHz | 10 | |||
| Transistor Characteristics | |||||||
| Collector to Emitter Voltage | VCEO | 80 | V | ||||
| Emitter to Collector Voltage | VECO | 7 | V | ||||
| Collector Current | IC | 50 | mA | ||||
| Power Dissipation | PC | 150 | mW | ||||
| Derating | PC/C | 1.5 | mW/C | ||||
| Collector to Emitter Dark Current | ICEO | nA | IF = 0 mA, VCE = 80 V | 100 | |||
| Current Transfer Ratio (IC/IF)*1 | CTR | % | IF = 5 mA, VCE = 5 V | 300 | 450 | 600 | |
| % | IF = 1 mA, VCE = 5 V | 60 | |||||
| Collector Saturation Voltage | VCE (sat) | V | IF = 10 mA, IC = 2 mA | 0.3 | |||
| Rise Time*2 | tr | s | VCC = 10 V, IC = 2 mA, RL = 100 | 5 | 18 | ||
| Fall Time*2 | tf | s | VCC = 10 V, IC = 2 mA, RL = 100 | 7 | 18 | ||
| Isolation Characteristics | |||||||
| Isolation Voltage*2 | BV | 5 000 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% | |||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | ||||
| Isolation Capacitance | CI-O | pF | V = 0 V, f = 1.0 MHz | 0.5 | |||
| Environmental & Operating Conditions | |||||||
| Operating Ambient Temperature | TA | 55 to +110 | C | ||||
| Storage Temperature | Tstg | 55 to +150 | C | ||||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina