High isolation voltage SOP photocoupler RENESAS PS2705A-1-F3-A with GaAs LED and NPN phototransistor
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Product Description
Product Description
The PS2705A-1 is a high isolation voltage SOP (Small Outline Package) photocoupler designed for high-density mounting applications. It features a GaAs light emitting diode and an NPN silicon phototransistor, offering excellent cost performance and AC input response. The SOP package provides a shield effect against ambient light. It is suitable for various applications including Hybrid ICs, Telephone/FAX, FA/OA equipment, programmable logic controllers, and power supplies.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet format)
- Origin: Made in Taiwan / Made in Japan (indicated by marking example)
- Material: GaAs light emitting diode and NPN silicon phototransistor
- Certifications: UL, CSA, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | ±50 | mA | |||
| Power Dissipation | PD | 80 | mW | |||
| Peak Forward Current*1 | IFP | PW = 100 µs, Duty Cycle = 1% | ±0.5 | A | ||
| Transistor Collector to Emitter Voltage | VCEO | 70 | V | |||
| Emitter to Collector Voltage | VECO | 5 | V | |||
| Collector Current | IC | 30 | mA | |||
| Power Dissipation | PC | 150 | mW | |||
| Isolation Voltage*2 | BV | AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 3 750 | V r.m.s. | ||
| Operating Ambient Temperature | TA | –55 | +100 | °C | ||
| Storage Temperature | Tstg | –55 | +150 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = ±5 mA | 1.2 | 1.4 | V | |
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 20 | pF | ||
| Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 70 V | 100 | nA | ||
| Coupled Current Transfer Ratio (IC/IF)*1 | CTR | IF = ±5 mA, VCE = 5 V | 50 | 300 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = ±10 mA, IC = 2 mA | 0.13 | 0.3 | V | |
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | Ω | ||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.4 | pF | ||
| Rise Time*2 | tr | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 5 | µs | ||
| Fall Time*2 | tf | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 7 | µs | ||
| Turn-on Time*2 | ton | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 8 | µs | ||
| Turn-off Time*2 | toff | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 10 | µs | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina