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GaAs LED and NPN Silicon Darlington Phototransistor Optocoupler RENESAS PS2533-1-A with 5000 Vrms Isolation Voltage

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Product Description

Product Overview

The PS2533-1 and PS2533L-1 are optically coupled isolators featuring a GaAs light-emitting diode and an NPN silicon Darlington phototransistor. They offer high collector-to-emitter voltage (VCEO = 350 V) and high isolation voltage (BV = 5,000 Vr.m.s.), making them suitable for applications requiring robust electrical isolation. The PS2533-1 is available in a plastic DIP, while the PS2533L-1 is a lead-bending type for surface mount applications. Key features include high current transfer ratio (CTR = 4,000% TYP.) and high-speed switching. These devices are used in telephone exchange equipment and FAX/MODEM systems.

Product Attributes

  • Brand: Not specified
  • Origin: Made in Japan
  • Material: Not specified
  • Color: Not specified
  • Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
ABSOLUTE MAXIMUM RATINGS
Diode Forward Current (DC)IF80mA
Reverse VoltageVR6V
Power Dissipation (Diode)PD150mW
Peak Forward Current*1IFPPW = 100 s, Duty Cycle = 1 %1A
Collector to Emitter VoltageVCEO350V
Emitter to Collector VoltageVECO0.6V
Collector CurrentIC150mA
Power Dissipation (Transistor)PC300mW
Isolation Voltage*2BVAC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together.5000Vr.m.s.
Operating Ambient TemperatureTA55+100C
Storage TemperatureTstg55+150C
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVFIF = 10 mA1.151.40V
Reverse CurrentIRVR = 5 V5A
Terminal CapacitanceCtV = 0 V, f = 1.0 MHz30pF
Collector to Emitter Dark CurrentICEOVCE = 350 V, IF = 0 mA400nA
Coupled Current Transfer Ratio (IC/IF)CTRIF = 1 mA, VCE = 2 V150040006500%
Collector Saturation VoltageVCE (sat)IF = 1 mA, IC = 2 mA1.0V
Isolation ResistanceRI-OVI-O = 1.0 kVDC1011
Isolation CapacitanceCI-OV = 0 V, f = 1.0 MHz0.6pF
Rise Time*1trVCC = 5 V, IC = 10 mA, RL = 100 100s
Fall Time*1tfVCC = 5 V, IC = 10 mA, RL = 100 100s

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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