Single transistor photocoupler RENESAS PS2561-1-A designed for operation in telephone and FA OA equipment
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PS2561-1 series are high isolation voltage single transistor type photocouplers. They consist of a GaAs light emitting diode and an NPN silicon phototransistor, offering high speed switching and high current transfer ratio. Available in various package types including DIP, lead bending for surface mount, and wide lead bending for surface mount, these devices are suitable for applications such as power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Japan / Made in Taiwan
- Material: Not specified
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)
Technical Specifications
| Model | Package Type | Isolation Voltage (BV) | Collector to Emitter Voltage (VCEO) | Current Transfer Ratio (CTR) TYP. | Switching Time (tr) TYP. | Switching Time (tf) TYP. |
| PS2561-1 | DIP | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L-1 | Lead Bending (Gull-wing) | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L1-1 | Wide Lead Bending | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L2-1 | Wide Lead Bending for Surface Mount | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
| Diode Forward Voltage | VF | IF = 10 mA | 1.17 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 50 | pF | ||
| Collector to Emitter Dark Current | ICEO | VCE = 80 V, IF = 0 mA | 100 | nA | ||
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 | pF |
| Parameter | Symbol | Ratings | Unit |
| Diode Reverse Voltage | VR | 6 | V |
| Forward Current (DC) | IF | 80 | mA |
| Power Dissipation (Diode) | PD | 150 | mW |
| Peak Forward Current | IFP | 1 | A |
| Emitter to Collector Voltage | VECO | 7 | V |
| Collector Current | IC | 50 | mA |
| Power Dissipation (Transistor) | PC | 150 | mW |
| Operating Ambient Temperature | TA | 55 to +100 | C |
| Storage Temperature | Tstg | 55 to +150 | C |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina