SSOP package photocoupler RENESAS PS2801C-1-V-F3-A with shield to prevent ambient light interference
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Description
The PS2801C-1 and PS2801C-4 are high isolation voltage SSOP photocouplers designed for high-density applications, offering excellent cost performance. They integrate a GaAs light emitting diode and an NPN silicon phototransistor within a plastic SSOP package that features a shield to block ambient light. These photocouplers are suitable for applications such as programmable logic controllers, measuring instruments, power supplies, and hybrid ICs.
Product Attributes
- Brand: Not specified
- Origin: Made in Taiwan, Made in Japan
- Certifications: UL (UL1577, Single protection), CSA (CAN/CSA-C22.2 No. 62368-1, Basic insulation), BSI (BS EN 62368-1, Basic/Supplementary insulation for PS2801C-1 only), VDE (DIN EN 60747-5-5, Option)
- Material: Not specified
- Color: Not specified
- Pb-Free: Yes
Technical Specifications
| Parameter | Symbol | PS2801C-1 Rating | PS2801C-4 Rating | Unit | Conditions | Min. | Typ. | Max. | |
| Diode Characteristics | Forward Current (DC) | 30 | 30 | mA/ch | |||||
| Reverse Voltage | 6 | 6 | V | ||||||
| Power Dissipation | 60 | 80 | mW/ch | ||||||
| Power Dissipation Derating | 0.6 | 0.8 | mW/C | ||||||
| Peak Forward Current | 0.5 | 0.5 | A/ch | PW = 100 s, Duty Cycle = 1% | |||||
| Forward Voltage | V | IF = 5 mA | 1.2 | 1.4 | |||||
| Reverse Current | A | VR = 5 V | 5 | ||||||
| Terminal Capacitance | Ct | pF | V = 0 V, f = 1.0 MHz | 10 | |||||
| Diode Power Dissipation vs. Ambient Temperature | PD | mW | |||||||
| Forward Current vs. Forward Voltage | IF | mA | |||||||
| Transistor Characteristics | Collector to Emitter Voltage | VCEO | 80 | 80 | V | ||||
| Emitter to Collector Voltage | VECO | 5 | 5 | V | |||||
| Collector Current | IC | 30 | 30 | mA/ch | |||||
| Power Dissipation | PC | 120 | 120 | mW/ch | |||||
| Power Dissipation Derating | PC/C | 1.2 | 1.2 | mW/C | |||||
| Collector to Emitter Dark Current | ICEO | nA | VCE = 80 V, IF = 0 mA | 100 | |||||
| Collector Saturation Voltage | VCE (sat) | V | IF = 10 mA, IC = 2 mA | 0.13 | 0.3 | ||||
| Collector Current vs. Collector to Emitter Voltage | IC | mA | |||||||
| Collector Current vs. Collector Saturation Voltage | IC | mA | |||||||
| Transistor Power Dissipation vs. Ambient Temperature | PC | mW | |||||||
| Collector to Emitter Dark Current vs. Ambient Temperature | ICEO | nA | |||||||
| Coupling Characteristics | Current Transfer Ratio | CTR | 50 | 50 | % | IF = 5 mA, VCE = 5 V | 50 | 400 | |
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | ||||||
| Isolation Capacitance | CI-O | pF | V = 0 V, f = 1.0 MHz | 0.4 | |||||
| Current Transfer Ratio vs. Forward Current | CTR | (%) | VCE = 5 V, n = 3 | ||||||
| Normalized Current Transfer Ratio vs. Ambient Temperature | CTR | Normalized to 1.0 at TA = 25C, IF = 5 mA, VCE = 5 V | |||||||
| Switching Characteristics | Rise Time | tr | s | VCC = 5 V, IC = 2 mA, RL = 100 | 5 | ||||
| Fall Time | tf | s | 7 | ||||||
| Turn-on Time | ton | s | 10 | ||||||
| Turn-off Time | toff | s | 7 | ||||||
| Isolation Characteristics | Isolation Voltage | BV | 2500 | 2500 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% | |||
| Air Distance | 4.5 | 4.5 | mm | ||||||
| Creepage Distance | 4.5 | 4.5 | mm | ||||||
| Isolation Distance | 0.1 | 0.1 | mm | ||||||
| Operating Ambient Temperature | TA | C | -55 | +100 | |||||
| Storage Temperature | Tstg | C | -55 | +150 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina