Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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Optocoupler RENESAS PS2561DL-1Y-V-F3-A Plastic DIP Photocoupler with GaAs LED and Silicon Transistor

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Price: Negotiable
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Delivery Time: Negotiable
Product Description

Product Description

The PS2561D-1 series are optically coupled isolators featuring a GaAs light emitting diode and an NPN silicon phototransistor. Available in a plastic DIP (Dual In-line Package) and lead bending types (Gull-wing) for surface mount, including options for long creepage distance. These photocouplers are designed for high-speed switching and offer excellent isolation and high collector to emitter voltage. They are suitable for applications in power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.

Product Attributes

  • Brand: Not specified
  • Origin: Made in Taiwan / Made in Japan
  • Material: Plastic DIP, Silicon Phototransistor
  • Color: Not specified
  • Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, CQC, VDE (Option)
  • Pb-Free Product: Yes

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
ABSOLUTE MAXIMUM RATINGS
Diode Reverse VoltageVR6V
Diode Forward Current (DC)IF40mA
Diode Power DissipationPD150mW
Diode Power Dissipation DeratingPD/C1.5mW/C
Diode Peak Forward CurrentIFP*1 PW = 100 s, Duty Cycle = 1 %1A
Transistor Collector to Emitter VoltageVCEO80V
Transistor Emitter to Collector VoltageVECO7V
Transistor Collector CurrentIC50mA
Transistor Power DissipationPC150mW
Transistor Power Dissipation DeratingPC/C1.5mW/C
Isolation VoltageBV*2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together.5000Vr.m.s.
Operating Ambient TemperatureTA55+110C
Storage TemperatureTstg55+150C
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVFIF = 10 mA1.21.4V
Reverse CurrentIRVR = 5 V5A
Terminal CapacitanceCtV = 0 V, f = 1.0 MHz10pF
Collector to Emitter Dark CurrentICEOVCE = 48 V, IF = 0 mA100nA
Coupled Current Transfer RatioCTRIF = 5 mA, VCE = 5 V50160400%
Coupled Current Transfer RatioCTRIF = 1 mA, VCE = 5 V1080%
Collector Saturation VoltageVCE (sat)IF = 10 mA, IC = 2 mA0.3V
Isolation ResistanceRI-OVI-O = 1.0 kVDC1011
Isolation CapacitanceCI-OV = 0 V, f = 1.0 MHz0.5pF
Rise Timetr*2 VCC = 10 V, IC = 2 mA, RL = 100 3s
Fall Timetf*2 VCC = 10 V, IC = 2 mA, RL = 100 5s

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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