Sillumin SiLM5346ATCR-DG isolated gate driver with SOP6W-T package and wide junction temperature range
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Delivery Time:
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Product Description
Product Overview
The SiLM534xAT isolated driver family from Sillumin Semiconductor is an opto-compatible, single-channel, isolated MOSFET and IGBT gate driver. It offers significant performance and reliability upgrades over traditional opto-coupler based gate drivers while maintaining pin-to-pin compatibility. Key advantages include high common mode transient immunity (CMTI), low propagation delay, and excellent aging characteristics due to its emulated diode input stage. This driver is ideal for motor drives, solar inverters, industrial power supplies, and appliances.
Product Attributes
- Brand: Sillumin Semiconductor Co., Ltd.
- Origin: Not specified
- Material Group: II (CTI >400V)
- Package: SOP6W-T
- Certifications: UL 1577 (5kVRMS isolation), CQC (GB4943.1-2022), TUV (IEC 61010-1, IEC 62368-1), DIN VDE 0884-17: 2021-10
Technical Specifications
| Part Number | Peak Output Current | UVLO Voltage | Isolation Rating | Gate Drive Supply Voltage (VCC-VEE) | Junction Temperature (TJ) |
|---|---|---|---|---|---|
| SiLM5340AT | 1.0 A | 12.5V | 5.0kVrms | 14 V to 40 V | -40C to +150C |
| SiLM5341AT | 3.0 A | 12.5V | 5.0kVrms | 14 V to 40 V | -40C to +150C |
| SiLM5343AT | 4.0 A | 12.5V | 5.0kVrms | 14 V to 40 V | -40C to +150C |
| SiLM5345AT | 1.0 A | 8.5V | 5.0kVrms | 10 V to 40 V | -40C to +150C |
| SiLM5346AT | 4.0 A | 8.5V | 5.0kVrms | 10 V to 40 V | -40C to +150C |
| Parameter | Value | Unit |
|---|---|---|
| Propagation Delay (Max.) | 110 | ns |
| Part-to-Part Delay Matching (Max.) | 25 | ns |
| Pulse Width Distortion (Max.) | 35 | ns |
| Common Mode Transient Immunity (CMTI) (Min.) | 150 | kV/us |
| Reverse Polarity Voltage Handling (Input) | 30 | V |
| Creepage and Clearance (Min.) | 8.0 | mm |
| Comparative Tracking Index (CTI) | >400 | V |
| Average Input Current (Max.) | 25 | mA |
| Reverse Input Voltage (Max.) | 30 | V |
| Output Supply Voltage (Max.) | 45 | V |
| Storage Temperature | -55 to 150 | C |
| HBM ESD Rating | ±4000 | V |
| CDM ESD Rating | ±2000 | V |
| Junction to Ambient Thermal Resistance | 125 | C/W |
| Junction to Case (Top) Thermal Resistance | 66 | C/W |
| Junction to Top Characterization Parameter | 30 | C/W |
| External Clearance (Min.) | 8 | mm |
| External Creepage (Min.) | 8 | mm |
| Distance Through Insulation (Min.) | 16 | μm |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina