Digital isolator device SKYWORKS SI8422AB-D-IS offering ultra CMOS technology with 150 Mbps data rate
Product Overview
Skyworks' Si8410/20/21 and Si8422/23/24/25/26 are ultra-low-power, single and dual-channel digital isolators based on CMOS technology. These devices offer significant advantages over traditional isolation methods in terms of data rate, propagation delay, power consumption, size, and reliability. They maintain stable operating parameters across wide temperature ranges and throughout their service life, ensuring consistent performance. Featuring Schmitt trigger inputs for high noise immunity and requiring only VDD bypass capacitors, these isolators support data rates up to 150 Mbps with worst-case propagation delays under 10 ns. Ordering options include various isolation ratings (up to 5 kV) and a selectable fail-safe mode for output state control during power loss. All devices are safety certified by UL, CSA, and VDE, with wide-body packages supporting reinforced insulation up to 5 kVRMS.
Product Attributes
- Brand: Skyworks
- Certifications: UL 1577 recognized, CSA component notice 5A approval, IEC 60950-1, IEC 61010-1, IEC 60601-1 (reinforced insulation), VDE certification conformity, IEC 60747-5-5 (VDE0884 Part 5), EN60950-1 (reinforced insulation)
- Material: CMOS
- Compliance: RoHS compliant packages
Technical Specifications
| Ordering Part Number (OPN) | Number of Inputs VDD1 Side | Number of Inputs VDD2 Side | Maximum Data Rate (Mbps) | Default Output State | Isolation Rating | Temp Range | Package Type |
| Si8422AB-D-IS | 1 | 1 | 1 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8422BB-D-IS | 1 | 1 | 150 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8423AB-D-IS | 2 | 0 | 1 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8423BB-D-IS | 2 | 0 | 150 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8424AB-D-IS | 2 | 0 | 1 | Low | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8424BB-D-IS | 2 | 0 | 150 | Low | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8425AB-D-IS | 1 | 1 | 1 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8425BB-D-IS | 1 | 1 | 150 | High | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8426AB-D-IS | 1 | 1 | 1 | Low | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8426BB-D-IS | 1 | 1 | 150 | Low | 2.5 kVrms | 40 to 125 C | SOIC-8 |
| Si8410AD-D-IS | 1 | 0 | 1 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8410BD-D-IS | 1 | 0 | 150 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8420AD-D-IS | 2 | 0 | 1 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8420BD-D-IS | 2 | 0 | 150 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8421AD-D-IS | 1 | 1 | 1 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8421BD-D-IS | 1 | 1 | 150 | Low | 5.0 kVrms | 40 to 125 C | SOIC-16 |
| Si8422AD-D-IS | 1 | 1 | 1 | High | 5.0 kVrms | 40 to 125 C | SOIC-8 |
| Si8422BD-D-IS | 1 | 1 | 150 | High | 5.0 kVrms | 40 to 125 C | SOIC-8 |
| Si8423AD-D-IS | 2 | 0 | 1 | High | 5.0 kVrms | 40 to 125 C | SOIC-8 |
| Si8423BD-D-IS | 2 | 0 | 150 | High | 5.0 kVrms | 40 to 125 C | SOIC-8 |
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