TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control
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Product Description
Product Overview
The TLP352 is a photocoupler featuring a GaAAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC. It offers guaranteed performance up to 125C and includes an internal Faraday shield for 20 kV/s common-mode transient immunity. With a totem-pole output capable of sinking and sourcing current, it is ideal for driving IGBT and power MOSFET gates in industrial applications.
Product Attributes
- Brand: Toshiba
- Start of commercial production: 2011-05
- Certifications: UL-approved (UL1577, File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN60747-5-5)
Technical Specifications
| Characteristics | Symbol | Min | Typ. | Max | Unit | Note |
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 20 | mA | |||
| Input forward current derating | IF/Ta | -0.6 | mA/ | (Ta 116 ) | ||
| Peak transient input forward current | IFPT | 1 | A | Note 1 | ||
| Peak transient input forward current derating | IFPT/Ta | -25 | mA/ | Note 2 | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 40 | mW | |||
| Input power dissipation derating | PD/Ta | -1.0 | mW/ | (Ta 110 ) | ||
| Peak high-level output current | IOPH | -2.5 | A | |||
| Peak low-level output current | IOPL | +2.5 | A | |||
| Output voltage | VO | 35 | V | |||
| Supply voltage | VCC | 35 | V | |||
| Output power dissipation | PO | 260 | mW | |||
| Output power dissipation derating | PO/Ta | -6.5 | mW/ | (Ta 110 ) | ||
| Operating temperature | Topr | -40 | to | 125 | ||
| Storage temperature | Tstg | -55 | to | 150 | ||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 3750 | Vrms | AC, 60 s, R.H. 60 % | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 6.5 | 10 | mA | Note 1 | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | Note 2 | |
| Supply voltage | VCC | 15 | 30 | V | ||
| Peak high-level output current | IOPH | -2.0 | A | Note 3 | ||
| Peak low-level output current | IOPL | +2.0 | A | Note 3 | ||
| Operating frequency | f | 50 | kHz | |||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.4 | 1.55 | 1.7 | V | IF = 10 mA, Ta = 25 |
| Input forward voltage temperature coefficient | VF/Ta | -2.0 | mV/ | IF = 10 mA | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 95 | pF | V = 0 V, f = 1 MHz, Ta = 25 | ||
| Peak high-level output current | IOPH | -1.6 | -1.0 | A | IF = 5 mA, VCC = 30 V, V8-6 = -3.5 V | |
| Peak low-level output current | IOPL | -2.0 | A | IF = 5 mA, VCC = 15 V, V8-6 = -7.0 V | ||
| High-level output voltage | VOH | 1.0 | 1.6 | V | IF = 0 mA, VCC = 30 V, V6-5 = 2.5 V | |
| Low-level output voltage | VOL | 2.0 | V | IF = 0 mA, VCC = 15 V, V6-5 = 7.0 V | ||
| High-level supply current | ICCH | 11.0 | 13.7 | mA | IF = 5 mA, RL = 200 , VCC1 = +15 V, VEE1 = -15 V | |
| Low-level supply current | ICCL | -14.9 | -12.5 | mA | VF = 0.8 V, RL = 200 , VCC1 = +15 V, VEE1 = -15 V | |
| Threshold input current (L/H) | IFLH | 1.5 | 1.5 | 5 | mA | IF = 10 mA, VCC = 30 V, VO = Open |
| Threshold input voltage (H/L) | VFHL | 1.0 | V | IF = 0 mA, VCC = 30 V, VO = Open | ||
| Supply voltage UVLO threshold voltage | VCC | 15 | 30 | V | ||
| UVLO hysteresis | UVLOHYS | 1.5 | V | |||
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1 1012 | 1014 | VS = 500 V, R.H. 60 % | ||
| Isolation voltage | BVS | 3750 | Vrms | AC, 60 s | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 200 | ns | Note 1 | ||
| Propagation delay time (H/L) | tpHL | 200 | ns | Note 1 | ||
| Rise time | tr | ns | Note 1 | |||
| Fall time | tf | ns | Note 1 | |||
| Pulse width distortion | |tpHL-tpLH| | ns | ||||
| Propagation delay skew (device to device) | tpsk | ns | ||||
| Common-mode transient immunity at output high | CMH | 20 | kV/s | |||
| Common-mode transient immunity at output low | CML | 20 | kV/s | |||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina