photocoupler TOSHIBA TLP5752 LF4 E with reinforced insulation class and compact 6 pin SO6L package design
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Product Description
Product Overview
The TLP5752 is a photocoupler featuring an infrared LED and a high-gain, high-speed photodetector housed in a compact 6-pin SO6L package. It offers a 50% size reduction compared to 8-pin DIP packages, meeting reinforced insulation class requirements for international safety standards, thus enabling smaller equipment designs. The device includes an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s and provides rail-to-rail output for stable operation and improved switching performance.
Product Attributes
- Brand: Toshiba
- Start of Commercial Production: 2014-06
- Certifications: UL-recognized (UL 1577, File No.E67349), cUL-recognized (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
- Note on VDE Approved Type: Option (D4)
Technical Specifications
| Characteristics | Symbol | Min | Typ. | Max | Unit | Note |
| Features | ||||||
| Buffer logic type | (1) Buffer logic type (totem pole output) | |||||
| Output peak current | 2.5 | A | (2) | |||
| Operating temperature | Topr | -40 | 110 | C | (3) | |
| Supply current | 3.0 | mA | (4) | |||
| Supply voltage | VCC | 15 | 30 | V | (5) | |
| Threshold input current | 4 | mA | (6) | |||
| Propagation delay time (tpHL/tpLH) | 150 | ns | (7) | |||
| Common-mode transient immunity | 35 | kV/s | (8) | |||
| Isolation voltage | BVS | 5000 | Vrms | (9) | ||
| Mechanical Parameters | ||||||
| Height | 2.3 | mm (max) | ||||
| Creepage distances | 8.0 | mm (min) | ||||
| Clearance distances | 8.0 | mm (min) | ||||
| Internal isolation thickness | 0.4 | mm (min) | ||||
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 20 | mA | (Ta = 25 C) | ||
| Input forward current derating | IF/Ta | -1 | mA/C | (Ta 105 C) | ||
| Peak transient input forward current | IFPT | 1 | A | (PW 1 s, 300 pps) | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 40 | mW | (Ta = 25 C) | ||
| Input power dissipation derating | PD/Ta | -1.0 | mW/C | (Ta 85 C) | ||
| Junction temperature | Tj | 125 | C | |||
| Peak high-level output current | IOPH | -2.5 | A | (Ta = -40 to 110 C) | ||
| Peak low-level output current | IOPL | +2.5 | A | (Ta = -40 to 110 C) | ||
| Output voltage | VO | 35 | V | |||
| Supply voltage | VCC | 35 | V | |||
| Output power dissipation | PO | 450 | mW | (Ta = 25 C) | ||
| Output power dissipation derating | PO/Ta | -4.5 | mW/C | (Ta 85 C) | ||
| Junction temperature | Tj | 125 | C | |||
| Storage temperature | Tstg | -55 | 125 | C | ||
| Lead soldering temperature | Tsol | 260 | C | (10 s) | ||
| Isolation voltage | BVS | 5000 | Vrms | (AC, 60 s, R.H. 60 %) | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 6 | 15 | mA | (Note 1) | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | (Note 2) | |
| Supply voltage | VCC | 15 | 30 | V | ||
| Peak high-level output current | IOPH | -2.5 | A | (Note 3) | ||
| Peak low-level output current | IOPL | +2.5 | A | (Note 3) | ||
| Operating frequency | f | 50 | kHz | (Note 3) | ||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.45 | 1.55 | 1.70 | V | (IF = 10 mA, Ta = 25 C) |
| Input forward voltage temperature coefficient | VF/Ta | -1.8 | mV/C | (IF = 10 mA) | ||
| Input reverse current | IR | 10 | A | (VR = 5 V, Ta = 25 C) | ||
| Input capacitance | Ct | 60 | pF | (V = 0 V, f = 1 MHz, Ta = 25 C) | ||
| Peak high-level output current | IOPH | -1.2 | A | (IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V) | ||
| Peak low-level output current | IOPL | 2.5 | A | (IF = 5 mA, VCC = 15 V, V6-5 = -7 V) | ||
| High-level output voltage | VOH | 1.2 | 1.4 | V | (IF = 0 mA, VCC = 30 V, V5-4 = 2.5 V) | |
| Low-level output voltage | VOL | 0.07 | 0.2 | V | (IF = 0 mA, VCC = 15 V, V5-4 = 7 V) | |
| High-level supply current | ICCH | 14.7 | 30 | mA | (IF = 10 mA, VCC = 30 V, IO = -100 mA) | |
| Low-level supply current | ICCL | 14.9 | mA | (VF = 0.8 V, VCC = 15 V, IO = 100 mA) | ||
| Threshold input current (L/H) | IFLH | 1.8 | 3.0 | mA | (IF = 5 mA, VO > 2.5 V) | |
| Threshold input voltage (H/L) | VFHL | 1.7 | V | (IF = 5 mA, VO | ||
| Supply voltage UVLO threshold voltage | VUVLO+ | 12.7 | 13.5 | V | (VCC = 15 V, VO > 1 V) | |
| Supply voltage UVLO threshold voltage | VUVLO- | 11.7 | 12.4 | V | (VCC = 15 V, VO | |
| Supply voltage UVLO hysteresis | UVLOHYS | 0.8 | 1.0 | V | ||
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 1.0 | pF | (VS = 0 V, f = 1 MHz) | ||
| Isolation resistance | RS | 1012 | 1014 | (VS = 500 V, R.H. 60 %) | ||
| Isolation voltage | BVS | 5000 | Vrms | (AC, 60 s) | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 150 | ns | (IF = 0 10 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF) | ||
| Propagation delay time (H/L) | tpHL | 150 | ns | (IF = 10 0 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF) | ||
| Rise time | tr | 150 | ns | (IF = 0 10 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF) | ||
| Fall time | tf | 150 | ns | (IF = 10 0 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF) | ||
| Pulse width distortion | 0 | ns | (Note 2) | |||
| Propagation delay skew (device to device) | tpsk | 50 | ns | (Note 2) | ||
| High-level common-mode transient immunity | CMH | 35 | kV/s | (Note 4) | ||
| Low-level common-mode transient immunity | CML | 35 | kV/s | (Note 4) | ||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina