Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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Compact 6 pin SO6L photocoupler TOSHIBA TLP5754 LF4 E with infrared LED and high speed photodetector

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The TLP5754 is a photocoupler featuring an infrared LED and a high-gain, high-speed photodetector in a compact 6-pin SO6L package. It offers a 50% size reduction compared to 8-pin DIP packages, meets reinforced insulation class requirements for international safety standards, and allows for reduced mounting area in certified equipment. The internal Faraday shield provides a guaranteed common-mode transient immunity of 35 kV/s. With rail-to-rail output, it ensures stable operation and improved switching performance.

Product Attributes

  • Brand: Toshiba
  • Start of Commercial Production: 2014-06
  • Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
  • Factory Locations: Japan and Thailand

Technical Specifications

CharacteristicSymbolMinTyp.MaxUnitNotes
Features
Buffer logic type(totem pole output)
Output peak current4.0A(max)
Operating temperatureTopr-40110
Supply current3.0mA(max)
Supply voltageVCC1530V
Threshold input current4mA(max)
Propagation delay timetpHL/tpLH150ns(max)
Common-mode transient immunity35kV/s(min)
Isolation voltageBVS5000Vrms(min)
Absolute Maximum Ratings
Input forward currentIF20mA(Ta 105 )
Peak transient input forward currentIFPT1A(PW 1 s, 300 pps)
Input reverse voltageVR5V
Input power dissipationPD40mW(Ta 85 )
Junction temperatureTj125
Peak high-level output currentIOPH-4.0A
Peak low-level output currentIOPL+4.0A
Output voltageVO35V
Supply voltageVCC35V
Output power dissipationPO450mW(Ta 85 )
Junction temperatureTj125
Storage temperatureTstg-55125
Lead soldering temperatureTsol260(10 s)
Isolation voltageBVS5000Vrms(AC, 60 s, R.H. 60%)
Recommended Operating Conditions
Input on-state currentIF(ON)615mA(Note 1)
Input off-state voltageVF(OFF)00.8V(Note 2)
Supply voltageVCC1530V
Peak high-level output currentIOPH-4.0A(Note 3)
Peak low-level output currentIOPL+4.0A(Note 3)
Operating frequencyf50kHz(Note 3)
Electrical Characteristics
Input forward voltageVF1.451.551.70V(IF = 10 mA, Ta = 25 )
Input forward voltage temperature coefficientVF/Ta-1.8mV/(IF = 10 mA)
Input reverse currentIR10A(VR = 5 V, Ta = 25 )
Input capacitanceCt60pF(V = 0 V, f = 1 MHz, Ta = 25 )
Peak high-level output currentIOPH-1.2A(IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V)
Peak low-level output currentIOPL-3.0A(IF = 5 mA, VCC = 15 V, V6-5 = -7 V)
High-level output voltageVOH1.2V(IF = 0 mA, VCC = 30 V, VO = Open)
Low-level output voltageVOL0.070.2V(IF = 4 mA, VCC = 15 V, IO = -100 mA)
High-level supply currentICCH14.714.9mA(VF = 0.8 V, VCC = 15 V, IO = 100 mA)
Low-level supply currentICCL3.03.0mA(IF = 10 mA, VCC = 30 V, VO = Open)
Threshold input current (L/H)IFLH1.83.0mA(VCC = 15 V, VO > 1 V)
Threshold input voltage (H/L)VFHL1.41.7V(IF = 0 mA, VCC = 30 V, VO
Supply voltage UVLO threshold voltageVUVLO+1512.713.5V(IF = 5 mA, VO > 2.5 V)
Supply voltage UVLO hysteresisUVLOHYS0.81.0V(IF = 5 mA, VO
Isolation Characteristics
Total capacitance (input to output)CS1.0pF(VS = 0 V, f = 1 MHz)
Isolation resistanceRS10121014(VS = 500 V, R.H. 60 %)
Isolation voltageBVS5000Vrms(AC, 60 s)
Switching Characteristics
Propagation delay time (L/H)tpLH150ns(IF = 0 10 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF)
Propagation delay time (H/L)tpHL150ns(IF = 10 0 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF)
Rise timetr150ns(IF = 0 10 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF)
Fall timetf150ns(IF = 10 0 mA, VCC = 30 V, Rg = 10 , Cg = 25 nF)
Pulse width distortion150ns
Propagation delay skew (device to device)tpsk150ns
High-level common-mode transient immunityCMH35kV/s(min)
Low-level common-mode transient immunityCML35kV/s(min)

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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