TOSHIBA TLP5214A D4 E IGBT gate driver photocoupler in SO16L package with long creepage and clearance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The TLP5214A is a highly integrated 4.0 A output current IGBT gate drive photocoupler housed in a long creepage and clearance SO16L package. This smart gate driver photocoupler includes functions of IGBT desaturation detection, isolated fault status feedback, soft IGBT turn-off, active Miller cramping, and under voltage lockout (UVLO). It features desaturation leading edge blanking time, filtering time, and optimized soft-shutdown performance for secure operation. Suitable for driving IGBT and power MOSFET in inverter applications, it consists of two infrared LEDs and two high-gain, high-speed ICs for high current, high-speed output control and fault status feedback.
Product Attributes
- Brand: TOSHIBA
- Model: TLP5214A
- Certifications: UL-recognized (UL 1577, File No.E67349), cUL-recognized (CSA Component Acceptance Service No. 5A, File No.E67349), VDE approved (EN 60747-5-5, EN 62368-1)
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| LED Input forward current | IF | 25 | mA | |||
| Input forward current derating (Ta 95C) | IF/Ta | -1 | mA/C | |||
| Peak transient input forward current | IFPT | 1 | A | Pulse width PW 1 s, 300 pps | ||
| Peak transient input forward current derating (Ta 95C) | IFPT/Ta | -25 | mA/C | |||
| Reverse input voltage | VR | 6 | V | |||
| Input power dissipation | PD | 145 | mW | |||
| Input power dissipation derating (Ta 95C) | PD /Ta | -5.0 | mW/C | |||
| Detector Positive input supply voltage | VCC1 | -0.5 | 7 | V | ||
| H peak output current | IOPH | -4.0 | A | Ta = -40 to 110 C | ||
| L peak output current | IOPL | +4.0 | A | Ta = -40 to 110 C | ||
| FAULT output current | IFAULT | 8 | mA | |||
| FAULT pin voltage | VFAULT | -0.5 | VCC1 | V | ||
| Total output supply voltage (VCC2-VEE) | -0.5 | 35 | V | |||
| Negative output supply voltage (VE-VEE) | -0.5 | 15 | V | |||
| Positive output supply voltage (VCC2-VE) | -0.5 | 35 - (VE-VEE) | V | |||
| Output voltage | VO | -0.5 | VCC2 | V | ||
| Peak clamping sinking current | IClamp | 1.7 | A | |||
| Miller clamping pin voltage | VClamp | -0.5 | VCC2 | V | ||
| DESAT voltage | VDESAT | VE | VE + 10 | V | ||
| Output power dissipation | PO | 410 | mW | |||
| Output power dissipation derating (Ta 95C) | PO /Ta | -14.0 | mW/C | |||
| Operating temperature range | Topr | -40 | 110 | C | ||
| Storage temperature range | Tstg | -55 | 125 | C | ||
| Lead soldering temperature (10 s) | Tsol | 260 | C | For the effective lead soldering area. | ||
| Isolation voltage (AC, 60 s, R.H. 60%) | BVS | 5000 | Vrms | Considered a two-terminal device. | ||
| Recommended Operating Conditions | ||||||
| Total output supply voltage (Note 1) | (VCC2-VEE) | 15 | 30 | V | VCC2 rise slope under 3.0 V / s. | |
| Negative output supply voltage | (VE-VEE) | 0 | 15 | V | ||
| Positive output supply voltage | (VCC2-VE) | 15 - (VE-VEE) | 30 - (VE-VEE) | V | ||
| Positive input supply voltage | VCC1 | 3.3 | 5.5 | V | ||
| Input on-state current (Note 2) | IF(ON) | 7.5 | 10 | mA | Input signal rise time (fall time) 0.5 s. | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | ||
| Operating frequency (Note 3) | f | 50 | kHz | Exponential waveform. IOPH -4.0 A ( 90 ns), IOPL 4.0 A ( 90 ns), Ta = 110 C | ||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.4 | 1.7 | V | IF = 10 mA, Ta = 25C | |
| Input reverse current | IR | 10 | A | VR = 5 V | ||
| Input capacitance | Ct | 95 | pF | V = 0 V, f = 1 MHz, Ta = 25 C | ||
| FAULT low level output voltage | VFAULTL | 0.2 | 0.4 | V | IFAULT = 1.1 mA, VCC1 = 5.5 V / 3.3 V | |
| FAULT high level output current | IFAULTH | 0.5 | A | VFAULT = 5.5 V, VCC1 = 5.5 V / 3.3 V, Ta = 25 C | ||
| High level output current (Note 1) | IOPH | -1.2 | -4.0 | A | VO = VCC2 - 4 V | |
| Low level output current (Note 1) | IOPL | 3.5 | 5.5 | A | VO = VEE + 2.5 V / VEE + 7 V | |
| Low level output current during fault condition | IOLF | 90 | 150 | 230 | mA | VO - VEE = 14 V |
| High level output voltage | VOH | VCC2-0.3 | VCC2-0.1 | V | IO = -100 mA | |
| Low level output voltage | VOL | 0.1 | 0.2 | V | IO = 100 mA | |
| Clamp pin threshold voltage | VtClamp | 2.5 | V | |||
| Clamp low level sinking current | ICL | 0.56 | 1.8 | A | VO = VEE + 2.5 V | |
| High level supply current | ICC2H | 2.4 | 3.8 | mA | IO = 0 mA | |
| Low level supply current | ICC2L | 2.3 | 3.8 | mA | IO = 0 mA | |
| Blanking capacitor charging current | ICHG | -0.33 | -0.24 | -0.13 | VDESAT = 2 V | |
| Blanking capacitor discharge current | IDSCHG | 10 | 49 | VDESAT = 7 V | ||
| DESAT threshold voltage | VDESAT | 5.9 | 6.5 | 7.5 | V | VCC2 - VE VUVLO- |
| UVLO threshold voltage (Upper) | VUVLO+ | 10.5 | 11.6 | 13.5 | V | VO 5 V |
| UVLO threshold voltage (Lower) | VUVLO- | 9.2 | 10.3 | 11.1 | V | VO 5 V |
| UVLO hysteresis | UVLOHYS | 1.3 | ||||
| Threshold input current (L/H) | IFLH | 2.6 | 6 | mA | VCC2 = 30 V, VO | |
| Threshold input voltage (H/L) | VFHL | 0.8 | V | VCC2 = 30 V, VO > 5 V | ||
| Isolation Characteristics | ||||||
| Capacitance input to output | CS | 1.0 | pF | Vs = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1012 | 1014 | R.H. 60 %, VS = 500 V | ||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s | ||
| Switching Characteristics | ||||||
| Propagation delay time (L H) | tpLH | 50 | 85 | 150 | ns | Rg = 10 , Cg = 25 nF, VCC2 = 30 V, IF = 0 10 mA |
| Propagation delay time (H L) | tpHL | 50 | 90 | 150 | ns | IF = 10 0 mA |
| Output rise time (10-90 %) | tr | 32 | IF = 0 10 mA | |||
| Output fall time (90-10 %) | tf | 18 | IF = 10 0 mA | |||
| Pulse width distortion | | tpHL-tpLH | | 50 | IF = 0 10 mA | |||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina