TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The TLP5751 is a photocoupler featuring an infrared LED and an integrated high-gain, high-speed photodetector housed in a compact 6-pin SO6L package. It offers significant size reduction compared to 8-pin DIP packages while meeting reinforced insulation class requirements for international safety standards, enabling smaller equipment designs. The device includes an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s and provides rail-to-rail output for stable operation and improved switching performance.
Product Attributes
- Brand: Toshiba Electronic Devices & Storage Corporation
- Start of Commercial Production: 2014-06
- Certifications: UL-recognized (UL 1577, File No.E67349), cUL-recognized (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
- Packaging Options: TLP5751 (11-4N1A), TLP5751(LF4) (11-4N101A)
- VDE Option: (D4)
Technical Specifications
| Characteristics | Symbol | Rating/Min | Unit | Note |
| Features | ||||
| Buffer logic type | Totem pole output | |||
| Output peak current | 1.0 | A (max) | ||
| Operating temperature | Topr | -40 to 110 | ||
| Supply current | 3.0 | mA (max) | ||
| Supply voltage | VCC | 15 to 30 | V | |
| Threshold input current | 4 | mA (max) | ||
| Propagation delay time | 150 | ns (max) | ||
| Common-mode transient immunity | 35 | kV/s (min) | ||
| Isolation voltage | BVS | 5000 | Vrms (min) | |
| Mechanical Parameters | ||||
| Height | 2.3 | (max) mm | ||
| Creepage distances | 8.0 | (min) mm | ||
| Clearance distances | 8.0 | (min) mm | ||
| Internal isolation thickness | 0.4 | (min) mm | ||
| Size | ||||
| Absolute Maximum Ratings | ||||
| Input forward current | IF | 20 | mA | (Ta 105 ) |
| Peak transient input forward current | IFPT | 1 | A | Pulse width (PW) 1 s, 300 pps |
| Input reverse voltage | VR | 5 | V | |
| Input power dissipation | PD | 40 | mW | (Ta 85 ) |
| Junction temperature | Tj | 125 | ||
| Peak high-level output current | IOPH | -1.0 | A | (Ta = -40 to 110 ) |
| Peak low-level output current | IOPL | +1.0 | A | (Ta = -40 to 110 ) |
| Output voltage | VO | 35 | V | |
| Supply voltage | VCC | 35 | V | |
| Output power dissipation | PO | 450 | mW | (Ta 85 ) |
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55 to 125 | ||
| Lead soldering temperature | Tsol | 260 | (10 s) | |
| Recommended Operating Conditions | ||||
| Input on-state current | IF(ON) | 6 to 15 | mA | |
| Input off-state voltage | VF(OFF) | 0 to 0.8 | V | |
| Supply voltage | VCC | 15 to 30 | V | |
| Peak high-level output current | IOPH | -1.0 | A | |
| Peak low-level output current | IOPL | +1.0 | A | |
| Operating frequency | f | 50 | kHz | |
| Electrical Characteristics | ||||
| Input forward voltage | VF | 1.45 to 1.70 | V | IF = 10 mA, Ta = 25 |
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 |
| Input capacitance | Ct | 60 | pF | V = 0 V, f = 1 MHz, Ta = 25 |
| Peak high-level output current | IOPH | -0.5 | A | IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V |
| Peak low-level output current | IOPL | -1.0 | A | IF = 5 mA, VCC = 15 V, V6-5 = -7 V |
| High-level output voltage | VOH | 0.5 | V | IF = 0 mA, VCC = 30 V, VO = Open |
| Low-level output voltage | VOL | 1.0 | V | IF = 0 mA, VCC = 15 V, VO = Open |
| High-level supply current | ICCH | 14.7 | mA | IF = 4 mA, VCC = 15 V, IO = -100 mA |
| Low-level supply current | ICCL | 0.07 | mA | VF = 0.8 V, VCC = 15 V, IO = 100 mA |
| Threshold input current (L/H) | IFLH | 4 | A | IF = 10 mA, VCC = 30 V, VO = Open |
| Threshold input voltage (H/L) | VFHL | 0.8 | V | IF = 0 mA, VCC = 30 V, VO = Open |
| Supply voltage UVLO threshold voltage | VUVLO+ | 15 | V | VCC = 15 V, VO > 1 V |
| Supply voltage UVLO hysteresis | UVLOHYS | 1.0 | V | IF = 5 mA, VO > 2.5 V |
| Isolation Characteristics | ||||
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz |
| Isolation resistance | RS | 1012 | VS = 500 V, R.H. 60 % | |
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s |
| Switching Characteristics | ||||
| Propagation delay time (L/H) | tpLH | 150 | ns (max) | |
| Propagation delay time (H/L) | tpHL | 150 | ns (max) | |
| Rise time | tr | |||
| Fall time | tf | |||
| Pulse width distortion | ||||
| Propagation delay skew (device to device) | tpsk | |||
| High-level common-mode transient immunity | CMH | 35 | kV/s (min) | |
| Low-level common-mode transient immunity | CML | 35 | kV/s (min) | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina