Toshiba TLP2362 TPL E photocoupler with internal Faraday shield 20 kV per second transient immunity

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Product Description

Product Overview

The Toshiba TLP2362 is a photocoupler featuring a high-output GaAAs infrared LED coupled with an integrated high-gain, high-speed photo-detector. It is designed for operation at up to 125C and supply voltages from 2.7 V to 5.5 V, housed in an SO6 package. The TLP2362 incorporates an internal Faraday shield, ensuring a guaranteed common-mode transient immunity of 20 kV/s. Its inverter logic type with an open collector output makes it suitable for various industrial applications.

Product Attributes

Brand: Toshiba
Start of Commercial Production: 2011-05
Certifications: UL-approved (UL1577, File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN60747-5-5, EN60065 or EN60950-1), CQC-approved (GB4943.1, GB8898)

Technical Specifications

Characteristic	Symbol	Min	Typ.	Max	Unit	Notes
Absolute Maximum Ratings
Input forward current	IF			25	mA
Input forward current derating	IF/Ta			-0.67	mA/	(Ta 110 )
Input forward current (pulsed)	IFP			40	mA	(Note 1)
Input forward current derating (pulsed)	IFP/Ta			-1.0	mA/	(Ta 110 )
Peak transient input forward current	IFPT			1	A	(Note 2)
Peak transient input forward current derating	IFPT/Ta			-25	mA/	(Ta 110 )
Input power dissipation	PD			40	mW
Input power dissipation derating	PD/Ta			-1.0	mW/	(Ta 110 )
Input reverse voltage	VR			5	V
Output current	IO			25	mA
Output voltage	VO			6	V
Supply voltage	VCC			6	V
Output power dissipation	PO			60	mW
Output power dissipation derating	PO/Ta			-1.5	mW/	(Ta 110 )
Operating temperature	Topr	-40		125
Storage temperature	Tstg	-55		125
Lead soldering temperature	Tsol			260		(10 s)
Isolation voltage	BVS	3750			Vrms	(AC, 60 s, R.H. 60 %)
Recommended Operating Conditions
Input on-state current	IF(ON)	7.5		14	mA	(Note 1)
Input off-state voltage	VF(OFF)	0		0.8	V	(Note 2)
Supply voltage	VCC	2.7	3.3/5.0	5.5	V	(Note 2)
Operating temperature	Topr	-40		125
Electrical Characteristics
Input forward voltage	VF	1.45	1.55	1.7	V	IF = 10 mA, Ta = 25
Input forward voltage temperature coefficient	VF/Ta		-2.0		mV/	IF = 10 mA
Input reverse current	IR			10	A	VR = 5 V, Ta = 25
Input capacitance	Ct		60		pF	V = 0 V, f = 1 MHz, Ta = 25
High-level output current	IOH			50	A	VF = 0.8 V, VO = 5.5 V, VCC = 5.5 V
Low-level output voltage	VOL		0.2	0.6	V	IF = 10 mA, IO = 13 mA (Sinking)
High-level supply current	ICCH		1.6	4.0	mA	IF = 10 mA, IO = 13 mA (Sinking), VO
Low-level supply current	ICCL		2.0	4.0	mA	IF = 0 mA
Threshold input current (H/L)	IFHL		1.0	5.0	mA
Isolation Characteristics
Total capacitance (input to output)	CS		0.8		pF	VS = 0 V, f = 1 MHz
Isolation resistance	RS	1 10¹²	10¹⁴			VS = 500 V, R.H. 60 %
Isolation voltage	BVS	3750			Vrms	AC, 60 s
Switching Characteristics
Propagation delay time (H/L)	tpHL			100	ns	IF = 07.5 mA, RL = 350 , CL = 15 pF
Propagation delay time (L/H)	tpLH			100	ns	IF = 7.50 mA, RL = 350 , CL = 15 pF
Pulse width distortion	\|tpHL- tpLH\|			35	ns	IF = 7.5 mA, RL = 350 , CL = 15 pF
Propagation delay skew (device to device)	tpsk	-40		40	ns	IF = 7.5 mA, RL = 350 , CL = 15 pF
Fall time	tf		30		ns	IF = 0 7.5 mA, RL = 350 , CL = 15 pF
Rise time	tr		30		ns	IF = 7.5 0 mA, RL = 350 , CL = 15 pF
Common-mode transient immunity at output high	CMH	20	25		kV/s	VCM = 1000 Vp-p, IF = 0 mA, VCC = 3.3 V / 5 V, Ta = 25
Common-mode transient immunity at output low	CML	20	25		kV/s	VCM = 1000 Vp-p, IF = 10 mA, VCC = 3.3 V / 5 V, Ta = 25