Photocoupler TOSHIBA TLP5701 TP E featuring UL cUL VDE and CQC approvals for industrial applications
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Product Description
Product Overview
The TLP5701 is a GaAlAs infrared LED and Photo IC photocoupler in a compact 6-pin SO6L package. It is designed for high-speed, high-gain applications, offering guaranteed performance up to 110C. Its smaller footprint compared to 8-pin DIP packages and compliance with international safety standards make it ideal for space-constrained designs requiring reinforced insulation. The integrated noise shield provides excellent common-mode transient immunity (20 kV/s), making it suitable for driving small class IGBT and power MOSFETs in applications like transistor inverters, IGBT gate drivers, MOSFET gate drivers, and induction cooktops.
Product Attributes
- Brand: Toshiba
- Start of Commercial Production: 2014-02
- Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5, EN60065 or EN60950-1, EN62368-1 Pending), CQC-approved (GB4943.1, GB8898)
- Option for VDE approved type: (D4)
Technical Specifications
| Characteristic | Symbol | Rating/Min | Unit | Conditions |
| Features | ||||
| Buffer logic type | Totem pole output | |||
| Output peak current | IOPH | 0.6 (max) | A | |
| Operating temperature | Topr | -40 to 110 | C | |
| Supply current | 2 (max) | mA | ||
| Supply voltage | VCC | 10 to 30 | V | |
| Threshold input current | 5 (max) | mA | ||
| Propagation delay time | tpHL/tpLH | 500 (max) | ns | |
| Common-mode transient immunity | CMH/CML | 20 (min) | kV/s | |
| Isolation voltage | BVS | 5000 (min) | Vrms | (Note 1) |
| Absolute Maximum Ratings | ||||
| Input forward current | IF | 25 | mA | |
| Input forward current derating | IF/Ta | -0.67 | mA/C | (Ta 95 C) |
| Peak transient input forward current | IFPT | 1 | A | (Note 1) |
| Peak transient input forward current derating | IFPT/Ta | -25 | mA/s | (Note 2) |
| Input reverse voltage | VR | 5 | V | |
| Input power dissipation | PD | 40 | mW | |
| Input power dissipation derating | PD/Ta | -1.0 | mW/C | (Ta 95 C) |
| Peak high-level output current | IOPH | 0.6 | A | |
| Peak low-level output current | IOPL | -0.6 | A | |
| Output voltage | VO | 35 | V | |
| Supply voltage | VCC | 35 | V | |
| Output power dissipation | PO | 80 | mW | |
| Output power dissipation derating | PO/Ta | -2.0 | mW/C | (Ta 95 C) |
| Storage temperature | Tstg | -55 to 125 | C | |
| Lead soldering temperature | Tsol | 260 | C | (10 s) |
| Recommended Operating Conditions | ||||
| Input on-state current | IF(ON) | 6.5 to 10 | mA | |
| Input off-state voltage | VF(OFF) | 0 to 0.8 | V | |
| Supply voltage | VCC | 10 to 30 | V | |
| Peak high-level output current | IOPH | -0.2 | A | (Note 3) |
| Peak low-level output current | IOPL | 0.2 | A | (Note 3) |
| Operating frequency | f | 25 | kHz | (Note 4) |
| Electrical Characteristics | ||||
| Input forward voltage | VF | 1.40 to 1.80 | V | IF = 10 mA, Ta = 25 C |
| Input forward voltage temperature coefficient | VF/Ta | -1.8 | mV/C | IF = 10 mA |
| Input reverse current | IR | 10 (max) | A | VR = 5 V, Ta = 25 C |
| Input capacitance | Ct | 60 (typ) | pF | V = 0 V, f = 1 MHz, Ta = 25 C |
| Peak high-level output current | IOPH | -0.51 (typ) | A | IF = 5 mA, VCC = 15 V, V6-5 = -4 V |
| Peak low-level output current | IOPL | -0.95 (typ) | A | IF = 5 mA, VCC = 15 V, V6-5 = -10 V |
| High-level output voltage | VOH | 0.2 to 1.0 | V | IF = 0 mA, VCC = 15 V, V5-4 = 2 V |
| Low-level output voltage | VOL | 0.4 to 2.0 | V | IF = 0 mA, VCC = 15 V, V5-4 = 10 V |
| High-level supply current | ICCH | 6.0 (typ) | mA | IF = 5 mA, VCC = 10 V, IO = -100 mA |
| Low-level supply current | ICCL | 0.83 (typ) | mA | VF = 0.8 V, VCC = 10 V, IO = 100 mA |
| Threshold input current (L/H) | IFLH | 0.8 (typ) | mA | IF = 5 mA, VO > 2.5 V |
| Threshold input voltage (H/L) | VFHL | 1.2 (typ) | V | IF = 5 mA, VO |
| Supply voltage UVLO threshold voltage | VCC VUVLO+ | 7.5 (typ) | V | IF = 5 mA, VO > 2.5 V |
| Supply voltage UVLO threshold voltage | VCC VUVLO- | 8.4 (typ) | V | IF = 5 mA, VO |
| Supply voltage UVLO hysteresis | UVLOHYS | 0.3 (typ) | V | |
| Isolation Characteristics | ||||
| Total capacitance (input to output) | CS | 1.0 (typ) | pF | VS = 0 V, f = 1 MHz |
| Isolation resistance | RS | 1 10^12 (min) | VS = 500 V, R.H. 60 % | |
| Isolation voltage | BVS | 5000 (min) | Vrms | AC, 60 s |
| Switching Characteristics | ||||
| Propagation delay time (L/H) | tpLH | 500 (max) | ns | (Note 1) |
| Propagation delay time (H/L) | tpHL | 500 (max) | ns | (Note 1) |
| Rise time | tr | 500 (max) | ns | (Note 1) |
| Fall time | tf | 500 (max) | ns | (Note 1) |
| Pulse width distortion | |tpHL-tpLH| | 500 (max) | ns | (Note 1) |
| Propagation delay skew (device to device) | tpsk | 500 (max) | ns | (Note 1) |
| Common-mode transient immunity at output high | CMH | 20 (min) | kV/s | (Note 2) |
| Common-mode transient immunity at output low | CML | 20 (min) | kV/s | (Note 3) |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina