TOSHIBA TLP2761 TP E featuring GaAAs infrared LED and high gain detector for digital signal isolation
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Product Description
TLP2761 Photocouplers
The Toshiba TLP2761 is a photocoupler featuring a GaAAs infrared LED and a high-gain, high-speed photo-detector integrated into an SO6L package. Designed for applications requiring efficient digital interfacing and isolation, it operates from 2.7 V to 5.5 V and is guaranteed to function at temperatures up to 125C. Its low supply current (1 mA) and low threshold input current (1.6 mA at 125C) contribute to energy savings. The internal Faraday shield provides a high common-mode transient immunity of 20 kV/s. This photocoupler is suitable for factory networking, high-speed digital interfacing for instrumentation and control devices, and I/O interface boards.
Product Attributes
- Brand: Toshiba
- Start of Commercial Production: 2015-01
- Certifications: UL-approved (UL1577, File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN60747-5-5, EN60065, EN60950-1, EN 62368-1)
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Notes |
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 10 | mA | |||
| Input forward current derating | IF/Ta | -0.13 | mA/ | (Ta 110 ) | ||
| Input forward current (pulsed) | IFP | 40 | mA | Pulse width (PW) 1 ms, duty = 50 % | ||
| Input forward current derating (pulsed) | IFP/Ta | -1.0 | mA/ | (Ta 110 ) | ||
| Peak transient input forward current | IFPT | 1 | A | Pulse width (PW) 1 s, 300 pps | ||
| Peak transient input forward current derating | IFPT/Ta | -25 | mA/ | (Ta 110 ) | ||
| Input power dissipation | PD | 20 | mW | |||
| Input power dissipation derating | PD/Ta | -0.5 | mW/ | (Ta 110 ) | ||
| Input reverse voltage | VR | 5 | V | |||
| Output current | IO | 10 | mA | |||
| Output voltage | VO | 6 | V | |||
| Supply voltage | VCC | 6 | V | |||
| Output power dissipation | PO | 20 | mW | |||
| Output power dissipation derating | PO/Ta | -0.5 | mW/ | (Ta 110 ) | ||
| Operating temperature | Topr | -40 | 125 | |||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s, R.H. 60 % | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 2 | 6 | mA | ||
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | ||
| Supply voltage | VCC | 2.7 | 5.5 | V | ||
| Operating temperature | Topr | -40 | 125 | |||
| Electrical Characteristics (Ta = -40 to 125 , VCC = 2.7 to 5.5 V) | ||||||
| Input forward voltage | VF | 1.50 | 1.65 | V | IF = 2 mA, Ta = 25 | |
| Input forward voltage temperature coefficient | VF/Ta | -2.0 | mV/ | IF = 2 mA | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 20 | pF | V = 0 V, f = 1 MHz, Ta = 25 | ||
| Low-level output voltage | VOL | 0.4 | V | IF = 2 mA, IO = -20 A, VCC = 3.3 V (Ta = -40 to 105 ) | ||
| High-level output voltage | VOH | 0.4 | V | IF = 2 mA, IO = -20 A, VCC = 3.3 V (Ta = -40 to 105 ) | ||
| Low-level supply current | ICCL | 0.65 | 1.0 | mA | IO = -20 A, VF = 0.8 V, VCC = 3.3 V | |
| High-level supply current | ICCH | 0.65 | 1.0 | mA | IO = -3.2 mA, VF = 0.8 V, VCC = 3.3 V | |
| Threshold input current (H/L) | IFHL | 1.3 | mA | IO = 3.2 mA, VO | ||
| Threshold input current (H/L) | IFHL | 1.6 | mA | IO = 3.2 mA, VO | ||
| Isolation Characteristics (Ta = 25 ) | ||||||
| Total capacitance (input to output) | CS | 0.4 | pF | VS = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1 1012 | 1014 | VS = 500 V, R.H. 60 % | ||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s | ||
| Switching Characteristics (Ta = -40 to 125 , VCC = 2.7 to 5.5 V) | ||||||
| Propagation delay time (H/L) | tpHL | 49 | 80 | ns | IF = 0 2 mA, RT = 1.68 k, CL = 15 pF | |
| Propagation delay time (L/H) | tpLH | 49 | 80 | ns | IF = 2 0 mA, RT = 1.68 k, CL = 15 pF | |
| Pulse width distortion | |tpHL-tpLH| | 0 | 25 | ns | ||
| Propagation delay skew (device to device) | tpsk | -30 | 30 | ns | ||
| Fall time | tf | 3 | ns | IF = 0 2 mA, RT = 1.68 k, CL = 15 pF | ||
| Rise time | tr | 3 | ns | IF = 2 0 mA, RT = 1.68 k, CL = 15 pF | ||
| Common-mode transient immunity at output high | CMH | 20 | 25 | kV/s | VCM = 1000 Vp-p, IF = 0 mA, VCC = 3.3 V / 5 V, Ta = 25 , RT = 1.68 k | |
| Common-mode transient immunity at output low | CML | 20 | 25 | kV/s | VCM = 1000 Vp-p, IF = 2 mA, VCC = 3.3 V / 5 V, Ta = 25 , RT = 1.68 k | |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina