Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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Toshiba TLP2309 V4 TPL E photocoupler with infrared LED coupled photodiode transistor in SO6 package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The Toshiba TLP2309 is a high-speed photocoupler featuring an infrared LED coupled with a photo-diode-transistor chip in an SO6 package. It offers operation up to 110C and supports 3.3V and 5V supplies. With guaranteed creepage/clearance distance 5.0 mm and internal isolation thickness 0.4 mm, it meets reinforced insulation class requirements according to international safety standards. Ideal for industrial inverters, switching power supplies, and high-speed digital interfacing.

Product Attributes

  • Brand: Toshiba
  • Certifications: UL-recognized (UL 1577), cUL-recognized (CSA), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
  • Origin: Thailand Factory (Note 1)

Technical Specifications

ParameterSymbolTest ConditionMinTyp.MaxUnit
General
Data transfer rate1Mbit/s (NRZ)
Common-mode transient immunityCMH/CML1520kV/s
Isolation voltageBVSAC, 60 s3750Vrms
Features
Inverter logic type(open collector output)
PackageSO6
Operating temperatureTopr-40110
Supply voltageVCC2.73.3 / 520V
Absolute Maximum Ratings
Input forward currentIF25mA
Peak transient input forward currentIFPTPW 1 s, 300 pps1A
Input power dissipationPD40mW
Input reverse voltageVR5V
Output currentIO8mA
Peak output currentIOP16mA
Supply voltageVCC-0.530V
Output voltageVO-0.520V
Output power dissipationPO100mW
Storage temperatureTstg-55125
Lead soldering temperatureTsol(10 s)260
Recommended Operating Conditions
Input on-state currentIF(ON)1020mA
Input off-state voltageVF(OFF)00.8V
Electrical Characteristics
Input forward voltageVFIF = 10 mA1.451.551.7V
Input reverse currentIRVR = 5 V10A
Input capacitanceCtV = 0 V, f = 1 MHz60500pF
High-level output currentIOHIF = 0 mA, VO = 5.5 V, VCC = 5.5 V35nA
High-level supply currentICCHIF = 0 mA, VO = 20 V, VCC = 30 V550A
Current transfer ratioIO/IFIF = 10 mA, VO = 0.4 V, VCC = 3.3 V15%
Current transfer ratioIO/IFIF = 16 mA, VO = 0.4 V, VCC = 4.5 V15%
Low-level output voltageVOLIF = 16 mA, VCC = 4.5 V, IO = 2.4 mA0.011V
Isolation Characteristics
Total capacitance (input to output)CSVS = 0 V, f = 1 MHz0.8pF
Isolation resistanceRSVS = 500 V, R.H. 60 %1014
Switching Characteristics
Propagation delay time (H/L)tpHLIF = 010 mA, RL = 1.9 k, VCC = 3.3 V, CL = 15 pF1s
Propagation delay time (L/H)tpLHIF = 100 mA, RL = 1.9 k, VCC = 3.3 V, CL = 15 pF1s
Propagation delay time (H/L)tpHLIF = 016 mA, RL = 1.9 k, VCC = 5 V, CL = 15 pF0.8s
Propagation delay time (L/H)tpLHIF = 160 mA, RL = 1.9 k, VCC = 5 V, CL = 15 pF0.8s
High-level common-mode transient immunityCMHIF = 0 mA, VCC = 3.3 V / 5 V, VCM = 400 Vp-p, RL = 4.1 k, Ta = 25 1520kV/s
Low-level common-mode transient immunityCMLIF = 10 mA, VCC = 3.3 V / 5 V, VCM = 400 Vp-p, RL = 4.1 k, Ta = 25 -15-20kV/s

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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