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Toshiba TLP2160 TP F high speed photocoupler with wide supply voltage range and totem pole output design

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The Toshiba TLP2160 is a high-speed photocoupler featuring a GaAAs infrared LED coupled with a high-speed photodiode-transistor chip. Designed for demanding applications, it operates reliably at temperatures up to 125C and across a supply voltage range of 2.7 V to 5.5 V. Its SO8 package and totem-pole output, capable of both sinking and sourcing current, contribute to board space savings. With an internal noise shield, it offers a guaranteed common-mode transient immunity of 20 kV/s, making it suitable for factory networking, high-speed digital interfacing for instrumentation and control devices, and plasma display panels.

Product Attributes

  • Brand: Toshiba
  • Start of Commercial Production: 2011-03
  • Certifications: UL-approved (UL1577 File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A, File No.E67349), VDE-approved (Option (V4) EN60747-5-5)

Technical Specifications

CharacteristicsSymbolMinTyp.MaxUnitNotes
Absolute Maximum Ratings
Input forward currentIF25mAEach channel
Input forward current derating (pulsed)IFP/Ta-1.0mA/Note 1, 2
Input power dissipationPD40mWEach channel
Input power dissipation deratingPD/Ta-1.0mW/Note 1
Input reverse voltageVR5V
Output currentIO10mA
Output voltageVO6V
Supply voltageVCC6V
Output power dissipationPO60mW
Output power dissipation deratingPO/Ta-1.5mW/Note 1
Operating temperatureTopr-40125
Storage temperatureTstg-55150
Lead soldering temperatureTsol260(10 s)
Isolation voltageBVS2500VrmsAC, 60 s, R.H. 60 % (Note 3)
Recommended Operating Conditions
Input on-state currentIF(ON)4.515mANote 1, 2
Input off-state voltageVF(OFF)00.8VNote 1
Supply voltageVCC2.73.3/5.05.5VNote 3
Operating temperatureTopr-40125Note 3
Electrical Characteristics
Input forward voltageVF1.451.551.7VIF = 10 mA, Ta = 25 (Note 1)
Input forward voltage temperature coefficientVF/Ta-2.0mV/IF = 10 mA (Note 1)
Input reverse currentIR10AVR = 5 V, Ta = 25 (Note 1)
Input capacitanceCt60pFV = 0 V, f = 1 MHz, Ta = 25 (Note 1)
Low-level output voltageVOL0.4VIF = 14 mA, IO = 4 mA (Note 1)
High-level output voltageVOH2.3VVF = 1.05 V, IO = -4 mA, VCC = 3.3 V (Note 1)
High-level output voltageVOHVVF = 1.05 V, IO = -4 mA, VCC = 5 V (Note 1)
Low-level supply currentICCL45mAIF = 14 mA (Note 1)
High-level supply currentICCH5mAIF = 0 mA (Note 1)
Threshold input current (H/L)IFHL3.5mAIO = 1.6 mA, VO
Isolation Characteristics
Total capacitance (input to output)CS0.8pFVS = 0 V, f = 1 MHz (Note 1)
Isolation resistanceRS110121014VS = 500 V, R.H. 60 % (Note 1)
Isolation voltageBVS2500VrmsAC, 60 s (Note 1)
Isolation voltageBVS5000VdcDC, 60 s in oil (Note 1)
Switching Characteristics (1) (Each Channel)
Propagation delay time (H/L)tpHL3040nsIF = 0 14 mA, RIN = 100 , CL = 15 pF (Note 1)
Propagation delay time (L/H)tpLH2540nsIF = 14 0 mA, RIN = 100 , CL = 15 pF (Note 1)
Pulse width distortion|tpHL- tpLH|525nsIF = 14 mA, RIN = 100 , CL = 15 pF (Note 1)
Propagation delay skew (device to device)tpsk-3030nsIF = 0 6 mA, RIN = 100 , CL = 15 pF (Note 1, 2)
Propagation delay time (H/L)tpHL3655nsIF = 6 0 mA, RIN = 100 , CL = 15 pF (Note 1)
Propagation delay time (L/H)tpLH2655nsIF = 6 mA, RIN = 100 , CL = 15 pF (Note 1)
Pulse width distortion|tpHL- tpLH|1030nsIF = 0 14 mA, RIN = 100 , CL = 15 pF (Note 1)
Propagation delay skew (device to device)tpsk-3030nsIF = 14 0 mA, RIN = 100 , CL = 15 pF (Note 1, 2)
Fall timetf15ns(Note 1)
Rise timetr15ns(Note 1)
Common-mode transient immunity at output highCMH2025kV/sVCM = 1000 Vp-p, IF = 0 mA, VO(min) = 2 V, VCC = 3.3 V, Ta = 25 (Note 1)
Common-mode transient immunity at output lowCML2025kV/sVCM = 1000 Vp-p, IF = 14 mA, VO(max) = 0.4 V, VCC = 3.3 V, Ta = 25 (Note 1)

Notes:
Note 1: Each channel
Note 2: Pulse width (PW) 1 ms, duty = 50 %
Note 3: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together.


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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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