TOSHIBA TLP2270 TP4 E high speed photocoupler with compact SO8L package and dual circuit integration
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The Toshiba TLP2270 is a high-speed photocoupler featuring an infrared LED coupled with a photo-diode-transistor chip, housed in a thin SO8L package. It offers a guaranteed isolation voltage of 5000 Vrms, compliant with international safety standards for reinforced insulation. With two circuits in a single package, it reduces mounting area. The TLP2270 operates from 2.7 V to 5.5 V and up to 125 , boasting low supply current (0.8 mA) and low threshold input current (1 mA at 125 ) for energy saving. Its internal Faraday shield provides a high common-mode transient immunity of 20 kV/s, enabling direct microcomputer driving with low input current.
Product Attributes
- Brand: Toshiba
- Product Type: Photocoupler
- Package: SO8L
- Commercial Production Start: 2016-10
- Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 8 | mA | Each channel | ||
| Input forward current derating (pulsed) | IF/Ta | -0.32 | mA/ | (Ta 110 ) | ||
| Peak transient input forward current | IFP | 16 | mA | Each channel, Pulse width (PW) 1 ms, duty = 50 % | ||
| Peak transient input forward current derating | IFP/Ta | -0.64 | mA/ | (Ta 110 ) | ||
| Input power dissipation | PD | 20 | mW | Each channel | ||
| Input power dissipation derating | PD/Ta | -0.8 | mW/ | (Ta 110 ) | ||
| Input reverse voltage | VR | 5 | V | |||
| Output current | IO | 10 | mA | |||
| Output voltage | VO | 6 | V | |||
| Supply voltage | VDD | 6 | V | |||
| Output power dissipation | PO | 40 | mW | |||
| Output power dissipation derating | PO/Ta | -1.6 | mW/ | (Ta 110 ) | ||
| Operating temperature | Topr | -40 | 125 | |||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s, R.H. 60 % | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 1.3 | 6 | mA | Each channel | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | ||
| Supply voltage | VDD | 2.7 | 3.3 / 5.0 | 5.5 | V | |
| Operating temperature | Topr | -40 | 125 | |||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.35 | 1.50 | 1.65 | V | IF = 1.3 mA, Ta = 25 |
| Input forward voltage temperature coefficient | VF/Ta | -1.58 | mV/ | IF = 1.3 mA | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 26 | pF | V = 0 V, f = 1 MHz , Ta = 25 | ||
| Low-level output voltage | VOL | 0.0007 | 0.1 | V | VF = 0.8 V, IO = 20 A, VDD = 5 V | |
| High-level output voltage | VOH | 0.1 | 0.35 | V | VF = 0.8 V, IO = 3.2 mA, VDD = 5 V | |
| Low-level supply current | IDDL | 3.05 | mA | IF = 1.3 mA, IO = -20 A, VDD = 3.3 V | ||
| High-level supply current | IDDH | 4.75 | mA | IF = 1.3 mA, IO = -20 A, VDD = 5 V | ||
| Threshold input current (L/H) | IFLH | 0.43 | 0.8 | mA | IF = 1.3 mA, IO = -3.2 mA, VDD = 5 V | |
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 0.8 | pF | V = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1014 | V = 500 V, R.H. 60 % | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 5 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Propagation delay time (H/L) | tpHL | 5 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Pulse width distortion | |tpHL-tpLH| | 0 | 30 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | |
| Propagation delay skew (device to device) | tpsk | -30 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Propagation delay time (L/H) | tpLH | 5 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Propagation delay time (H/L) | tpHL | 5 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Pulse width distortion | |tpHL-tpLH| | 0 | 30 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | |
| Propagation delay skew (device to device) | tpsk | -30 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Rise time | tr | 5 | ns | VIN = 0 5 V, RT = 2.7 k, CIN = 12 pF | ||
| Fall time | tf | 5 | ns | VIN = 5 0 V, RT = 2.7 k, CIN = 12 pF | ||
| High-level common-mode transient immunity | CMH | 20 | kV/s | VIN = 3.3 V, 5 V, VDD = 3.3 V, 5 V, VCM = 1000 Vp-p, Ta = 25 | ||
| Low-level common-mode transient immunity | CML | 20 | kV/s | VIN = 3.3 V, 5 V, VDD = 3.3 V, 5 V, VCM = 1000 Vp-p, Ta = 25 | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina