Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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Optically coupled infrared LED device TOSHIBA TLP267J TPR E ideal for programmable logic controllers

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The TLP267J is a non-zero crossing photo triac, optically coupled to an infrared LED, housed in an SO6 package. It offers reinforced insulation class requirements with a creepage distance of 5.0 mm (min) and a clearance of 5.0 mm (min). This device is suitable for Triac Drivers, Programmable Logic Controllers (PLCs), AC-Output Modules, and Solid-State Relays.

Product Attributes

  • Brand: Toshiba Electronic Devices & Storage Corporation
  • Start of Commercial Production: 2013-10
  • Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
  • Safety Standards: UL 1577, CSA Component Acceptance Service, EN 60747-5-5, EN 62368-1, GB4943.1, GB8898
  • Origin: Thailand Factory

Technical Specifications

CharacteristicSymbolRating/ValueUnitNotes
Absolute Maximum Ratings
Peak off-state voltageVDRM600V
Isolation voltageBVS3750VrmsAC, 60 s, R.H. 60 %
Input forward currentIF30mA(Note 1)
Input power dissipationPD50mW(Note 2)
Junction temperature (LED)Tj125
Off-state output terminal voltage R.M.S.IT(RMS)70mA
Output power dissipationPO200mW(Note 3)
Junction temperature (Detector)Tj125
Operating temperatureTopr-40 to 100
Storage temperatureTstg-55 to 125
Lead soldering temperatureTsol260
Recommended Operating Conditions
AC mains voltageVAC240VMax
Input forward currentIF7.5mAMax
ON-state current (pulsed)IONP1AMax
Operating temperatureTopr85Max
Electrical Characteristics (LED Detector)
Input forward voltageVF1.27VIF = 10 mA (Typ.)
Input reverse currentIR10AVR = 5 V (Max)
Input capacitanceCt30pFV = 0 V, f = 1 MHz (Typ.)
Peak off-state currentIDRM1000nAVDRM = 600 V (Max)
Peak on-state voltageVTM2.8VITM = 70 mA (Max)
Holding currentIH0.2mA(Typ.)
Critical rate of rise of off-state voltagedv/dt500V/s(Typ.)
Critical rate of rise of commutating voltagedv/dt(c)0.2V/s(Typ.)
Coupled Electrical Characteristics
Trigger LED currentIFT3mAMax (IFT Rank: IFT2)
Turn-on timeton100sMax
Isolation Characteristics
Total capacitance (input to output)Cs0.8pFVS = 0 V, f = 1 MHz (Typ.)
Isolation resistanceRs1012VS = 500 V, R.H. 60% (Min)

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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