Zero crossing photo triac photocoupler TOSHIBA TLP3062A F in DIP6 package for office equipment and relays
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The TLP3062A and TLP3062AF are photocouplers featuring an infrared LED optically coupled to a zero-crossing photo triac. Housed in a DIP6 package, they offer a guaranteed insulation thickness of 0.4 mm (min), meeting reinforced insulation class requirements of international safety standards. These devices are suitable for applications such as solid-state relays, triac drivers, home electric appliances, and office equipment.
Product Attributes
- Brand: Toshiba
- Start of Commercial Production: 2015-08
- Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
- Material: Halogen-free resin packages (for details, see "Devices in Halogen-Free Resin Packages" section)
Technical Specifications
| Characteristics | TLP3062A (7.62 mm Pitch) | TLP3062AF (10.16 mm Pitch) | Unit |
| Creepage distances | 7.0 (min) | 8.0 (min) | mm |
| Clearance distances | 7.0 (min) | 8.0 (min) | mm |
| Internal isolation thickness | 0.4 (min) | 0.4 (min) | mm |
| Characteristics | Symbol | Rating | Unit | Note |
| Peak off-state voltage | VDRM | 600 | V | (min) |
| On-state current | IT(RMS) | 100 | mA | (max) |
| Isolation voltage | BVS | 5000 | Vrms | (min) |
| Trigger LED current | IFT | 10 | mA | (max) |
| Input forward current | IF | 50 | mA | |
| Input reverse voltage | VR | 5 | V | |
| Input power dissipation | PD | 100 | mW | |
| Junction temperature (LED) | Tj | 125 | ℃ | |
| R.M.S. on-state current derating | ɖIT(RMS)/ɖTa | -1.1 | mA/℃ | (Ta ≥ 25 ℃) |
| Output power dissipation | PO | 1.2 | mW | |
| Junction temperature (Detector) | Tj | 125 | ℃ | |
| Total power dissipation | PT | 400 | mW | |
| Operating temperature | Topr | -40 to 100 | ℃ | |
| Storage temperature | Tstg | -55 to 125 | ℃ | |
| Lead soldering temperature | Tsol | 260 | ℃ | (AC, 60 s, R.H. ≤ 60 %) |
| Characteristics | Symbol | Min | Typ. | Max | Unit | Test Condition |
| Input forward voltage | VF | 1.0 | 1.15 | 1.3 | V | IF = 10 mA |
| Input reverse current | IR | 10 | μA | VR = 5 V | ||
| Input capacitance | Ct | 30 | pF | V = 0 V, f = 1 MHz | ||
| Peak off-state current | IDRM | 10 | 1000 | nA | VDRM = 600 V | |
| Peak on-state voltage | VTM | 1.7 | 3.0 | V | ITM = 100 mA | |
| Holding current | IH | 0.6 | mA | |||
| Critical rate of rise of off-state voltage | dv/dt | 2000 | V/μs | Vin = 240 V, Ta = 25 ℃ | ||
| Critical rate of rise of commutating voltage | dv/dt(c) | 0.2 | V/μs | Vin = 60 Vrms, IT = 15 mA | ||
| Trigger LED current | IFT | 10 | mA | VT = 3 V | ||
| Inhibit voltage | VIH | 20 | V | IF = Rated IFT | ||
| Inhibit current | IIH | 200 | 600 | μA | IF = Rated IFT, VT=Rated VDRM | |
| Total capacitance (input to output) | CS | 0.8 | pF | VS = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1012 | 1014 | Ω | VS = 500 V, R.H. ≤ 60% |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina