UMW FOD3150 UMW optocoupler designed for fast switching drive in power system motor control inverters
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The UMW FOD3150 is a 1.0 Amp output current IGBT gate drive optocoupler designed for driving low-power IGBTs and MOSFETs. It features an AlGaAs LED coupled to a photosensitive integrated circuit, making it suitable for fast switching drive in motor control inverters and high-performance power systems. Key benefits include high common mode rejection, wide operating voltage range, and Under Voltage Lock-Out (UVLO) protection with hysteresis.
Product Attributes
- Brand: UMW
- Manufacturer: UTD Semiconductor Co., Limited
- Model: FOD3150
- Certifications: DIN/EN/IEC EN60747-5-5
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Forward Input Current | IFM | 25 | mA | TA= 25C | ||
| Reverse Voltage | VR | 5 | V | TA= 25C | ||
| Peak Output Current | IO(PEAK) | 1.5 | A | TA= 25C, Max pulse width = 10s, max duty cycle = 0.2 % | ||
| Supply Voltage | VDD - VSS | 35 | V | TA= 25C | ||
| Output Voltage | VO | VDD | V | TA= 25C | ||
| Isolation Voltage | VISO | 5000 | Vrms | TA= 25C | ||
| Input Power Dissipation | PDI | 45 | mW | TA= 25C, Derate linearly above 87C | ||
| Output Power Dissipation | PDO | 250 | mW | TA= 25C, No derating required | ||
| Operating Temperature | Topr | -40 | 110 | C | ||
| Storage Temperature | Tstg | -55 | 125 | C | ||
| Soldering Temperature | Tsol | 260 | C | |||
| Recommended Operating Conditions | ||||||
| Power Supply Voltage | VCC - VSS | 15 | 30 | V | ||
| Input Current (ON) | IF(ON) | 7 | 16 | mA | ||
| Input Voltage (OFF) | VF(OFF) | 0 | 0.8 | V | ||
| Operating Temperature | TA | -40 | 110 | C | ||
| Electro-optical Characteristics | ||||||
| Forward Voltage | VF | 1.2 | 1.5 | 1.8 | V | IF=10mA, TA=25C |
| Reverse Current | IR | 0.2 | 1 | A | VR=5V, TA=25C | |
| High Level Power Supply Current | IccH | 1 | 1.8 | mA | VO=VDD-2.5V, TA=25C | |
| Low Level Power Supply Current | IccL | 0.2 | 1 | mA | VO=VSS+2.5V, TA=25C | |
| Input The Turn On Current | IFLH | 1.2 | 1.8 | mA | VO=VSS+0.5V | |
| Input The Turn Off Voltage | VFHL | 3.8 | 5 | V | VO=VDD-0.5V | |
| UVLO Threshold (ON) | VUVLO+ | 11.5 | 12.7 | 13.5 | V | |
| UVLO Threshold (OFF) | VUVLO- | 10 | 11.2 | 12 | V | |
| UVLO Hysteresis | UVLOHYS | 1.5 | V | |||
| Isolation Resistance | RISO | 1011 | 1012 | VI-O=500V, 40~60%R.H. | ||
| Isolation Capacitance | CISO | 1 | pF | VI-O=0V, Freq=1MHZ | ||
| Propagation Delay Time to Low Output Level | TPHL | 100 | 250 | ns | IF=7mA to 16mA, Rg=10, Cg=10nF, F=10KHZ, Duty Cycle=50% | |
| Propagation Delay Time to High Output Level | TPLH | 100 | 250 | ns | IF=7mA to 16mA, Rg=10, Cg=10nF, F=10KHZ, Duty Cycle=50% | |
| Pulse Width Distortion | PDD | 300 | ns | |||
| Propagation Delay Difference Between Any Two Parts | -250 | 250 | ns | |||
| High Level Output Current | IOH | 10 | mA | IO=0mA, VO>5V | ||
| Low Level Output Current | IOL | -100 | -10 | mA | IO=0mA, VO | |
| High Level Output Voltage | VOH | VDD-2.5V | VDD-1V | V | IO=1A | |
| Low Level Output Voltage | VOL | VSS+0.5V | VSS+1V | VSS+4V | V | IO=-100mA |
| Output Rise Time | TR | 30 | ns | IF=7mA to 16mA, Rg=10, Cg=10NF, F=10KHZ, Duty Cycle=50% | ||
| Output Drop Time | TF | 30 | ns | IF=7mA to 16mA, Rg=10, Cg=10NF, F=10KHZ, Duty Cycle=50% | ||
| UVLO Turn On Delay | TUVLO ON | 50 | ns | |||
| UVLO Turn Off Delay | TUVLO OFF | 50 | ns | |||
| Common Mode Transient Immunity (High Level) | |CMH| | 80 | KV/s | TA=25C, VDD=30V, VCM=2000V, IF=7~16mA, VF=0V | ||
| Common Mode Transient Immunity (Low Level) | |CML| | 80 | KV/s | TA=25C, VDD=30V, VCM=2000V, IF=7~16mA, VF=0V | ||
| Insulation And Safety Related Specifications | ||||||
| Insulation Thickness | 0.4 | mm | Measured from input terminals to output terminals, shortest distance path along body | |||
| Creepage Distance | 7 | mm | Measured from input terminals to output terminals, shortest distance through air | |||
| Clearance Distance | 7 | mm | Insulation thickness between emitter and detector | |||
| Peak Isolation Voltage | VIOTM | 7000 | Vpeak | DIN/EN/IEC EN60747-5-5. For 1 min | ||
| Transient Isolation Voltage | DTI | 5000 | Vpeak | DIN/EN/IEC EN60747-5-5. For 1 min | ||
| Isolation Voltage | VIORM | 1500 | Vrms | |||
Get in Touch
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina