Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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High Current IGBT Gate Driver UMW TLP350F UMW Suitable for Power Systems and Motor Control Inverters

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Product Description

Product Overview

The UMW TLP350 is a 2.5A output current IGBT gate drive optocoupler featuring an AlGaAs LED coupled to a photosensitive integrated circuit. It is designed to drive low-power IGBTs and MOSFETs, making it ideal for fast switching applications in motor control inverters and high-performance power systems. Key features include high common-mode rejection, wide operating voltage range, fast propagation delay, and Under Voltage Lock-Out (UVLO) protection with hysteresis.

Product Attributes

  • Brand: UMW
  • Origin: UTD Semiconductor Co., Limited
  • Certifications: DIN/EN/IEC EN60747-5-5

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnits
Forward Input CurrentIFM25mA
Reverse VoltageVR5V
Input Power DissipationPD40mW
Peak Output CurrentIO(PEAK)(1)2.5A
Supply VoltageVCC1530V
Output VoltageVO35V
Output Power DissipationPO260mW
Isolation VoltageVISO5000Vrms
Total Power ConsumptionPtot300mW
Operating TemperatureTopr-40110C
Storage TemperatureTstg-55125C
Soldering TemperatureTsol(2)260C
Power Supply VoltageVCC1530V
Input Current (ON)IF(ON)(1)716mA
Input Voltage (OFF)VF(OFF)00.8V
Operating TemperatureTA-40110C
Forward VoltageVFIF=10mA1.21.51.8V
Reverse CurrentIRVR=5V-2-1A
High Level Power Supply CurrentIccHVCC=30V, IF=5mA, V8-6=3.5V101mA
Low Level Power Supply CurrentIccLVCC=15V, IF=5mA, V8-6=7V11.5mA
Input The Tum On CurrentIFLHVCC=30V, IF=0mA, V6-5=2.5V10mA
Input The Turn Off VoltageVFHLVCC=15V, IF=0mA, V6-5=7V3.8mA
UVLO HysteresisUVLOHYS1.5V
Isolation ResistanceRISOVI-O=500V, 40~60%R.H.1011
Isolation CapacitanceCISOVI-O=0V, Freq=1MHZ1pF
Propagation Delay Time to Low Output LevelTPLHIF=7mA to 16mA Rg=10 Cg=10nF F=10KHZ Duty Cycle=50% IO=-2.5A100250ns
Propagation Delay Time to High Output LevelTPHLIF=7mA to 16mA Rg=10 Cg=10nF F=10KHZ Duty Cycle=50% IO=-100mA100300ns
Pulse Width DistortionPWD100ns
Propagation Delay Difference Between Any Two PartsPDD300ns
High Level Output CurrentIOHVO=Open, IF=7 to 16mA-2.5A
Low Level Output CurrentIOLVO=Open, VF=0 to 0.8V2.5A
High Level Output VoltageVOHIO=0mA, VO>5VVCC-2.5V
Low Level Output VoltageVOLIO=0mA, VOVEE+2.5V
UVLO ThresholdVUVLO+IF=10mA, VO>5VVCC-6.25VCC-2.8V
UVLO ThresholdVUVLO-IF=10mA, VOVEE+0.3VEE+1.8V
Output Rise TimeTRIF=7mA to 16mA,Rg=10,Cg=10NF F=10KHZ, Duty Cycle=50%35ns
Output Drop TimeTFIF=7mA to 16mA,Rg=10,Cg=10NF F=10KHZ, Duty Cycle=50%35ns
UVLO Turn On DelayTUVLO ONIF=10mA, VO>5V50s
UVLO Turn Off DelayTUVLO OFFIF=10mA, VO50s
Output High Level Common Mode Transient Immunity|CMH|TA=25C, VDD=30V VCM=2000V, IF=7~16mA, VF=0V80KV/s
Output Low Level Common Mode Transient Immunity|CML|TA=25C, VDD=30V VCM=2000V, IF=7~16mA, VF=0V80KV/s

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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